Scalable Layer-Controlled Oxidation of Bi2O2Se for Self-Rectifying Memristor Arrays With sub-pA Sneak Currents

Scalable Layer-Controlled Oxidation of Bi2O2Se for Self-Rectifying Memristor Arrays With sub-pA Sneak Currents

© 2024 Wiley‐VCH GmbH.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 36(2024), 44 vom: 09. Nov., Seite e2406608
1. Verfasser: Zhao, Yingjie (VerfasserIn)
Weitere Verfasser: Lou, Zhefeng, Hu, Jiaming, Li, Zishun, Xu, Lanxin, Chen, Zhe, Xu, Zhuokai, Wang, Tao, Wu, Mengqi, Ying, Haoting, An, Minghao, Li, Wenbin, Lin, Xiao, Zheng, Xiaorui
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2024
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article layer‐controlled intercalative oxidation quasi‐free‐standing single‐crystalline Bi2O2Se self‐rectifying memristor array sneak current β‐Bi2SeO5
Beschreibung
Zusammenfassung:© 2024 Wiley‐VCH GmbH.
Smart memristors with innovative properties are crucial for the advancement of next-generation information storage and bioinspired neuromorphic computing. However, the presence of significant sneak currents in large-scale memristor arrays results in operational errors and heat accumulation, hindering their practical utility. This study successfully synthesizes a quasi-free-standing Bi2O2Se single-crystalline film and achieves layer-controlled oxidation by developing large-scale UV-assisted intercalative oxidation, resulting β-Bi2SeO5/Bi2O2Se heterostructures. The resulting β-Bi2SeO5/Bi2O2Se memristor demonstrates remarkable self-rectifying resistive switching performance (over 105 for ON/OFF and rectification ratios, as well as nonlinearity) in both nanoscale (through conductive atomic force microscopy) and microscale (through memristor array) regimes. Furthermore, the potential for scalable production of self-rectifying β-Bi2SeO5/Bi2O2Se memristor, achieving sub-pA sneak currents to minimize cross-talk effects in high-density memristor arrays is demonstrated. The memristors also exhibit ultrafast resistive switching (sub-100 ns) and low power consumption (1.2 pJ) as characterized by pulse-mode testing. The findings suggest a synergetic effect of interfacial Schottky barriers and oxygen vacancy migration as the self-rectifying switching mechanism, elucidated through controllable β-Bi2SeO5 thickness modulation and theoretical ab initio calculations
Beschreibung:Date Revised 01.11.2024
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.202406608