Potential Application of 2D Haeckelite MoS2 as an Anode Material for Mg Ion Batteries

The design and preparation of anode materials with structural stability, fast ion transmission, and low open-circuit voltage are critical to the development of magnesium ion batteries (MIBs). The feasibility of the unique phase Haeckelite MoS2 (Hae-MoS2) monolayer with Haeckelite structure as a pote...

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Veröffentlicht in:Langmuir : the ACS journal of surfaces and colloids. - 1999. - 40(2024), 37 vom: 17. Sept., Seite 19396-19403
1. Verfasser: Hu, Junshan (VerfasserIn)
Weitere Verfasser: Jin, Wei, Tan, Zhaoyang, Wu, Song, Tian, Jingyu, Sun, Yujie, Ding, Chang-Chun
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2024
Zugriff auf das übergeordnete Werk:Langmuir : the ACS journal of surfaces and colloids
Schlagworte:Journal Article
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520 |a The design and preparation of anode materials with structural stability, fast ion transmission, and low open-circuit voltage are critical to the development of magnesium ion batteries (MIBs). The feasibility of the unique phase Haeckelite MoS2 (Hae-MoS2) monolayer with Haeckelite structure as a potential anode material for MIBs was investigated using density functional theory (DFT) calculations. The Hae-MoS2 monolayer exhibits excellent structural stability and semimetallic characteristics with a Dirac cone located at the Gamma point of band structure. Mg ion is easily adsorbed on the Hae-MoS2 monolayer surface with an adsorption energy of -2.06 eV and can diffuse rapidly with a low diffusion energy barrier (0.3 eV), indicating excellent charge and discharge rates. Most importantly, the Hae-MoS2 monolayer exhibits a suitable open-circuit voltage, which falls within the desired voltage range and ensures the safety of battery performance. These exceptional properties indicate that the Hae-MoS2 monolayer can be proposed as a candidate for anode material for MIBs 
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700 1 |a Jin, Wei  |e verfasserin  |4 aut 
700 1 |a Tan, Zhaoyang  |e verfasserin  |4 aut 
700 1 |a Wu, Song  |e verfasserin  |4 aut 
700 1 |a Tian, Jingyu  |e verfasserin  |4 aut 
700 1 |a Sun, Yujie  |e verfasserin  |4 aut 
700 1 |a Ding, Chang-Chun  |e verfasserin  |4 aut 
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