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240709s2024 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202405807
|2 doi
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|a pubmed24n1516.xml
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|a DE-627
|b ger
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|a eng
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| 100 |
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|a Zhou, Wentao
|e verfasserin
|4 aut
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| 245 |
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|a A Soldering Flux Tackles Complex Defects Chemistry in Sn-Pb Perovskite Solar Cells
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|c 2024
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 28.08.2024
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2024 Wiley‐VCH GmbH.
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|a Developing tin-lead (Sn-Pb) narrow-bandgap perovskites is crucial for the deployment of all-perovskite tandem solar cells, which can help to exceed the limits of single-junction photovoltaics. However, the Sn-Pb perovskite suffers from a large number of bulk traps and interfacial nonradiative recombination centers, with unsatisfactory open-circuit voltage and the consequent device efficiency. Herein, for the first time, it is shown that abietic acid (AA), a commonly used flux for metal soldering, effectively tackles complex defects chemistry in Sn-Pb perovskites. The conjugated double bond within AA molecule plays a key role for self-elimination of Sn4+-Pb0 defects pair, via a redox process. In addition, C═O group is able to coordinate with Sn2+, leading to the improved antioxidative stability of Sn-Pb perovskites. Consequently, a ten-times longer carrier lifetime is observed, and the defects-associated dual-peak emission feature at low temperature is significantly inhibited. The resultant device achieves a power conversion efficiency improvement from 22.28% (Ref) to 23.42% with respectable stability under operational and illumination situations
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|a Journal Article
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|a Sn‐Pb
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|a abietic acid
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|a low bandgap
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|a perovskite
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|a self‐elimination
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|a Chen, Yihua
|e verfasserin
|4 aut
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|a Li, Nengxu
|e verfasserin
|4 aut
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|a Huang, Zijian
|e verfasserin
|4 aut
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|a Zhang, Yu
|e verfasserin
|4 aut
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|a Zhang, Zhongyang
|e verfasserin
|4 aut
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|a Guo, Zhenyu
|e verfasserin
|4 aut
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|a Yin, Ruiyang
|e verfasserin
|4 aut
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| 700 |
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|a Ma, Yue
|e verfasserin
|4 aut
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| 700 |
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|a Pei, Fengtao
|e verfasserin
|4 aut
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| 700 |
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|a Xie, Haipeng
|e verfasserin
|4 aut
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|a Zai, Huachao
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Lina
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Qiu, Zhiwen
|e verfasserin
|4 aut
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| 700 |
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|a Chen, Qi
|e verfasserin
|4 aut
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| 700 |
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|a Zhou, Huanping
|e verfasserin
|4 aut
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| 773 |
0 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 36(2024), 35 vom: 08. Aug., Seite e2405807
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:36
|g year:2024
|g number:35
|g day:08
|g month:08
|g pages:e2405807
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|u http://dx.doi.org/10.1002/adma.202405807
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