A Soldering Flux Tackles Complex Defects Chemistry in Sn-Pb Perovskite Solar Cells

© 2024 Wiley‐VCH GmbH.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 36(2024), 35 vom: 08. Aug., Seite e2405807
1. Verfasser: Zhou, Wentao (VerfasserIn)
Weitere Verfasser: Chen, Yihua, Li, Nengxu, Huang, Zijian, Zhang, Yu, Zhang, Zhongyang, Guo, Zhenyu, Yin, Ruiyang, Ma, Yue, Pei, Fengtao, Xie, Haipeng, Zai, Huachao, Wang, Lina, Qiu, Zhiwen, Chen, Qi, Zhou, Huanping
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2024
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Sn‐Pb abietic acid low bandgap perovskite self‐elimination
Beschreibung
Zusammenfassung:© 2024 Wiley‐VCH GmbH.
Developing tin-lead (Sn-Pb) narrow-bandgap perovskites is crucial for the deployment of all-perovskite tandem solar cells, which can help to exceed the limits of single-junction photovoltaics. However, the Sn-Pb perovskite suffers from a large number of bulk traps and interfacial nonradiative recombination centers, with unsatisfactory open-circuit voltage and the consequent device efficiency. Herein, for the first time, it is shown that abietic acid (AA), a commonly used flux for metal soldering, effectively tackles complex defects chemistry in Sn-Pb perovskites. The conjugated double bond within AA molecule plays a key role for self-elimination of Sn4+-Pb0 defects pair, via a redox process. In addition, C═O group is able to coordinate with Sn2+, leading to the improved antioxidative stability of Sn-Pb perovskites. Consequently, a ten-times longer carrier lifetime is observed, and the defects-associated dual-peak emission feature at low temperature is significantly inhibited. The resultant device achieves a power conversion efficiency improvement from 22.28% (Ref) to 23.42% with respectable stability under operational and illumination situations
Beschreibung:Date Revised 28.08.2024
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.202405807