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240603s2024 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202404626
|2 doi
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|a pubmed24n1516.xml
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|a (DE-627)NLM37314024X
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|a (NLM)38825781
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|a DE-627
|b ger
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|e rakwb
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|a eng
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| 100 |
1 |
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|a Liu, Dexing
|e verfasserin
|4 aut
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| 245 |
1 |
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|a Hydrogen-Bonding Integrated Low-Dimensional Flexible Electronics Beyond the Limitations of van der Waals Contacts
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|c 2024
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| 336 |
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|a Date Revised 28.08.2024
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2024 Wiley‐VCH GmbH.
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|a Van der Waals (vdW) integration enables clean contacts for low-dimensional electronic devices. The limitation remains; however, that an additional tunneling contact resistance occurs owing to the inherent vdW gap between the metal and the semiconductor. Here, it is demonstrated from theoretical calculations that stronger non-covalent hydrogen-bonding interactions facilitate electron tunneling and significantly reduce the contact resistance; thus, promising to break the limitations of the vdW contact. π-plane hydrogen-bonding contacts in surface-engineered MXene/carbon nanotube metal/semiconductor heterojunctions are realized, and an anomalous temperature-dependent tunneling resistance is observed. Low-dimensional flexible thin-film transistors integrated by hydrogen-bonding contacts exhibit both excellent flexibility and carrier mobility orders of magnitude higher than their counterparts with vdW contacts. This strategy demonstrates a scalable solution for realizing high-performance and low-power flexible electronics beyond vdW contacts
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|a Journal Article
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|a density functional theory
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|a flexible electronics
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|a hydrogen‐bonding
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|a van der Waals contact
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1 |
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|a Liu, Ziyi
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Gao, Xinyu
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhu, Jiahao
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Zifan
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Qiu, Rui
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Ren, Qinqi
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhang, Yiming
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhang, Shengdong
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhang, Min
|e verfasserin
|4 aut
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| 773 |
0 |
8 |
|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 36(2024), 35 vom: 25. Aug., Seite e2404626
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
1 |
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|g volume:36
|g year:2024
|g number:35
|g day:25
|g month:08
|g pages:e2404626
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| 856 |
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|u http://dx.doi.org/10.1002/adma.202404626
|3 Volltext
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