Hydrogen-Bonding Integrated Low-Dimensional Flexible Electronics Beyond the Limitations of van der Waals Contacts

Bibliographische Detailangaben
Veröffentlicht in:	Advanced materials (Deerfield Beach, Fla.). - 1998. - 36(2024), 35 vom: 25. Aug., Seite e2404626
1. Verfasser:	Liu, Dexing (VerfasserIn)
Weitere Verfasser:	Liu, Ziyi, Gao, Xinyu, Zhu, Jiahao, Wang, Zifan, Qiu, Rui, Ren, Qinqi, Zhang, Yiming, Zhang, Shengdong, Zhang, Min
Format:	Online-Aufsatz
Sprache:	English
Veröffentlicht:	2024
Zugriff auf das übergeordnete Werk:	Advanced materials (Deerfield Beach, Fla.)
Schlagworte:	Journal Article density functional theory flexible electronics hydrogen‐bonding van der Waals contact

Beschreibung
Zusammenfassung:	© 2024 Wiley‐VCH GmbH. Van der Waals (vdW) integration enables clean contacts for low-dimensional electronic devices. The limitation remains; however, that an additional tunneling contact resistance occurs owing to the inherent vdW gap between the metal and the semiconductor. Here, it is demonstrated from theoretical calculations that stronger non-covalent hydrogen-bonding interactions facilitate electron tunneling and significantly reduce the contact resistance; thus, promising to break the limitations of the vdW contact. π-plane hydrogen-bonding contacts in surface-engineered MXene/carbon nanotube metal/semiconductor heterojunctions are realized, and an anomalous temperature-dependent tunneling resistance is observed. Low-dimensional flexible thin-film transistors integrated by hydrogen-bonding contacts exhibit both excellent flexibility and carrier mobility orders of magnitude higher than their counterparts with vdW contacts. This strategy demonstrates a scalable solution for realizing high-performance and low-power flexible electronics beyond vdW contacts
Beschreibung:	Date Revised 28.08.2024 published: Print-Electronic Citation Status PubMed-not-MEDLINE
ISSN:	1521-4095
DOI:	10.1002/adma.202404626