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|a 10.1002/adma.202404982
|2 doi
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|a pubmed24n1488.xml
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|a (DE-627)NLM372698174
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|a (NLM)38781489
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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|a Jiang, Yun-Shan
|e verfasserin
|4 aut
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|a A Cable-Stayed Honeycomb Superstructure to Improve the Stability of Li-Rich Materials via Inhibiting Interlaminar Lattice Strain
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|c 2024
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Revised 01.08.2024
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2024 Wiley‐VCH GmbH.
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|a In layered Li-rich materials, over stoichiometric Li forms an ordered occupation of LiTM6 in transition metal (TM) layer, showing a honeycomb superstructure along [001] direction. At the atomic scale, the instability of the superstructure at high voltage is the root cause of problems such as capacity/voltage decay of Li-rich materials. Here a Li-rich material with a high Li/Ni disorder is reported, these interlayer Ni atoms locate above the honeycomb superstructure and share adjacent O coordination with honeycomb TM. These Ni─O bonds act as cable-stayed bridge to the honeycomb plane, and improve the high-voltage stability. The cable-stayed honeycomb superstructure is confirmed by in situ X-ray diffraction to have a unique cell evolution mechanism that it can alleviate interlaminar lattice strain by promoting in-plane expansion along a-axis and inhibiting c-axis stretching. Electrochemical tests also demonstrate significantly improved long cycle performance after 500 cycles (86% for Li-rich/Li half cell and 82% for Li-rich/Si-C full cell) and reduced irreversible oxygen release. This work proves the feasibility of achieving outstanding stability of lithium-rich materials through superstructure regulation and provides new insights for the development of the next-generation high-energy-density cathodes
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|a Journal Article
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|a Li/Ni disorder
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|a Li‐rich cathode
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|a lithium‐ion batteries
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|a oxygen redox
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|a Liao, Zhong-Miao
|e verfasserin
|4 aut
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1 |
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|a Yu, Fu-da
|e verfasserin
|4 aut
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1 |
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|a Ke, Wang
|e verfasserin
|4 aut
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1 |
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|a Li, Xin-Yu
|e verfasserin
|4 aut
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1 |
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|a Xia, Yang
|e verfasserin
|4 aut
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1 |
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|a Xu, Gui-Jing
|e verfasserin
|4 aut
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|a Sun, Gang
|e verfasserin
|4 aut
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1 |
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|a Xia, Yuan-Guang
|e verfasserin
|4 aut
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1 |
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|a Yin, Wen
|e verfasserin
|4 aut
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1 |
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|a Deng, Liang
|e verfasserin
|4 aut
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1 |
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|a Zhao, Lei
|e verfasserin
|4 aut
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1 |
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|a Wang, Zhen-Bo
|e verfasserin
|4 aut
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0 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 36(2024), 31 vom: 01. Aug., Seite e2404982
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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|g volume:36
|g year:2024
|g number:31
|g day:01
|g month:08
|g pages:e2404982
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|u http://dx.doi.org/10.1002/adma.202404982
|3 Volltext
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|a GBV_ILN_350
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|a AR
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|d 36
|j 2024
|e 31
|b 01
|c 08
|h e2404982
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