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240515s2024 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202402947
|2 doi
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|a pubmed24n1482.xml
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|a (DE-627)NLM372322832
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|a (NLM)38743762
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|a DE-627
|b ger
|c DE-627
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|a eng
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|a Wang, Tianyue
|e verfasserin
|4 aut
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| 245 |
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|a Counter-Doping Effect by Trivalent Cations in Tin-Based Perovskite Solar Cells
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|c 2024
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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| 338 |
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Revised 25.07.2024
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2024 The Author(s). Advanced Materials published by Wiley‐VCH GmbH.
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|a Tin (Sn) -based perovskite solar cells (PSCs) normally show low open circuit voltage due to serious carrier recombination in the devices, which can be attributed to the oxidation and the resultant high p-type doping of the perovskite active layers. Considering the grand challenge to completely prohibit the oxidation of Sn-based perovskites, a feasible way to improve the device performance is to counter-dope the oxidized Sn-based perovskites by replacing Sn2+ with trivalent cations in the crystal lattice, which however is rarely reported. Here, the introduction of Sb3+, which can effectively counter-dope the oxidized perovskite layer and improve the carrier lifetime, is presented. Meanwhile, Sb3+ can passivate deep-level defects and improve carrier mobility of the perovskite layer, which are all favorable for the photovoltaic performance of the devices. Consequently, the target devices yield a relative enhancement of the power conversion efficiency (PCE) of 31.4% as well as excellent shelf-storage stability. This work provides a novel strategy to improve the performance of Sn-based PSCs, which can be developed as a universal way to compensate for the oxidation of Sn-based perovskites in optoelectronic devices
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|a Journal Article
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|a Sn‐based perovskite solar cell
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|a counter‐doping
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4 |
|a efficiency
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| 650 |
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4 |
|a trivalent antimony
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| 700 |
1 |
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|a Loi, Hok-Leung
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Cao, Qi
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Feng, Guitao
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Guan, Zhiqiang
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wei, Qi
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Chen, Changsheng
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Li, Mingjie
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhu, Ye
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Lee, Chun-Sing
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Yan, Feng
|e verfasserin
|4 aut
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| 773 |
0 |
8 |
|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 36(2024), 30 vom: 21. Juli, Seite e2402947
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:36
|g year:2024
|g number:30
|g day:21
|g month:07
|g pages:e2402947
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|u http://dx.doi.org/10.1002/adma.202402947
|3 Volltext
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