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240509s2024 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202403164
|2 doi
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|a pubmed25n1239.xml
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|a (DE-627)NLM372091334
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|a (NLM)38720548
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|a DE-627
|b ger
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|e rakwb
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|a eng
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| 100 |
1 |
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|a Jeong, Yoo Jae
|e verfasserin
|4 aut
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| 245 |
1 |
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|a Rapid Surface Reconstruction of In2S3 Photoanode via Flame Treatment for Enhanced Photoelectrochemical Performance
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|c 2024
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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| 338 |
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Revised 30.05.2024
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|a published: Print-Electronic
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|a Citation Status Publisher
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|a © 2024 The Authors. Advanced Materials published by Wiley‐VCH GmbH.
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|a Surface reconstruction, reorganizing the surface atoms or structure, is a promising strategy to manipulate materials' electrical, electrochemical, and surface catalytic properties. Herein, a rapid surface reconstruction of indium sulfide (In2S3) is demonstrated via a high-temperature flame treatment to improve its charge collection properties. The flame process selectively transforms the In2S3 surface into a diffusionless In2O3 layer with high crystallinity. Additionally, it controllably generates bulk sulfur vacancies within a few seconds, leading to surface-reconstructed In2S3 (sr-In2S3). When using those sr-In2S3 as photoanode for photoelectrochemical water splitting devices, these dual functions of surface In2O3/bulk In2S3 reduce the charge recombination in the surface and bulk region, thus improving photocurrent density and stability. With optimized surface reconstruction, the sr-In2S3 photoanode demonstrates a significant photocurrent density of 8.5 mA cm-2 at 1.23 V versus a reversible hydrogen electrode (RHE), marking a 2.5-fold increase compared to pristine In2S3 (3.5 mA cm-2). More importantly, the sr-In2S3 photoanode exhibits an impressive photocurrent density of 7.3 mA cm-2 at 0.6 V versus RHE for iodide oxidation reaction. A practical and scalable surface reconstruction is also showcased via flame treatment. This work provides new insights for surface reconstruction engineering in sulfide-based semiconductors, making a breakthrough in developing efficient solar-fuel energy devices
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|a Journal Article
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|a In2S3 photoanode
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4 |
|a flame treatment
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|a photoelectrochemical performance
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| 650 |
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4 |
|a stability
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| 650 |
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4 |
|a surface reconstruction
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| 700 |
1 |
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|a Tan, Runfa
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Nam, Seongsik
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Lee, Jong Ho
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Kim, Sung Kyu
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Lee, Tae Gyu
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Shin, Seong Sik
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zheng, Xiaolin
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Cho, In Sun
|e verfasserin
|4 aut
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| 773 |
0 |
8 |
|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g (2024) vom: 08. Mai, Seite e2403164
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnas
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| 773 |
1 |
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|g year:2024
|g day:08
|g month:05
|g pages:e2403164
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|u http://dx.doi.org/10.1002/adma.202403164
|3 Volltext
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