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|a 10.1002/adma.202403647
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|a pubmed24n1503.xml
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|a (NLM)38708960
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|a DE-627
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|a eng
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|a Kim, Tae Hyuk
|e verfasserin
|4 aut
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|a Atto-Scale Noise Near-Infrared Organic Photodetectors Enabled by Controlling Interfacial Energetic Offset through Enhanced Anchoring Ability
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|c 2024
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|a Text
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|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|a Date Revised 16.08.2024
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|a published: Print-Electronic
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|a ErratumIn: Adv Mater. 2024 Aug 15:e2409268. doi: 10.1002/adma.202409268. - PMID 39148159
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|a Citation Status Publisher
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|a © 2024 Wiley‐VCH GmbH.
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|a The near-infrared (NIR) sensor technology is crucial for various applications such as autonomous driving and biometric tracking. Silicon photodetectors (SiPDs) are widely used in NIR applications; however, their scalability is limited by their crystalline properties. Organic photodetectors (OPDs) have attracted attention for NIR applications owing to their scalability, low-temperature processing, and notably low dark current density (JD), which is similar to that of SiPDs. However, the still high JD (at NIR band) and few measurements of noise equivalent powers (NEPs) pose challenges for accurate performance comparisons. This study addresses these issues by quantitatively characterizing the performance matrix and JD generation mechanism using electron-blocking layers (EBLs) in OPDs. The energy offset at an EBL/photosensitive layer interface determines the thermal activation energy and directly affects JD. A newly synthesized EBL (3PAFBr) substantially enhances the interfacial energy barrier by forming a homogeneous contact owing to the improved anchoring ability of 3PAFBr. As a result, the OPD with 3PAFBr yields a noise current of 852 aA (JD = 12.3 fA cm⁻2 at V → -0.1 V) and several femtowatt-scale NEPs. As far as it is known, this is an ultralow of JD in NIR OPDs. This emphasizes the necessity for quantitative performance characterization
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|a Journal Article
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|a attoscale‐noise organic photodiode
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|a electron‐blocking layer
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|a femtowatt‐scale noise equiv. power
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|a interfacial energetic offset
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|a suppressed dark current
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|a Lee, Ji Hyeon
|e verfasserin
|4 aut
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|a Jang, Min Ho
|e verfasserin
|4 aut
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|a Lee, Gyeong Min
|e verfasserin
|4 aut
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|a Shim, Eun Soo
|e verfasserin
|4 aut
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|a Oh, Seunghyun
|e verfasserin
|4 aut
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|a Saeed, Muhammad Ahsan
|e verfasserin
|4 aut
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|a Lee, Min Jong
|e verfasserin
|4 aut
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|a Yu, Byoung-Soo
|e verfasserin
|4 aut
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|a Hwang, Do Kyung
|e verfasserin
|4 aut
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|a Park, Chae Won
|e verfasserin
|4 aut
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|a Lee, Sae Youn
|e verfasserin
|4 aut
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|a Jo, Jea Woong
|e verfasserin
|4 aut
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|a Shim, Jae Won
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g (2024) vom: 06. Mai, Seite e2403647
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g year:2024
|g day:06
|g month:05
|g pages:e2403647
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|u http://dx.doi.org/10.1002/adma.202403647
|3 Volltext
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