Atto-Scale Noise Near-Infrared Organic Photodetectors Enabled by Controlling Interfacial Energetic Offset through Enhanced Anchoring Ability

Atto-Scale Noise Near-Infrared Organic Photodetectors Enabled by Controlling Interfacial Energetic Offset through Enhanced Anchoring Ability

© 2024 Wiley‐VCH GmbH.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 36(2024), 40 vom: 07. Okt., Seite e2403647
1. Verfasser: Kim, Tae Hyuk (VerfasserIn)
Weitere Verfasser: Lee, Ji Hyeon, Jang, Min Ho, Lee, Gyeong Min, Shim, Eun Soo, Oh, Seunghyun, Saeed, Muhammad Ahsan, Lee, Min Jong, Yu, Byoung-Soo, Hwang, Do Kyung, Park, Chae Won, Lee, Sae Youn, Jo, Jea Woong, Shim, Jae Won
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2024
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article attoscale‐noise organic photodiode electron‐blocking layer femtowatt‐scale noise equiv. power interfacial energetic offset suppressed dark current
Beschreibung
Zusammenfassung:© 2024 Wiley‐VCH GmbH.
The near-infrared (NIR) sensor technology is crucial for various applications such as autonomous driving and biometric tracking. Silicon photodetectors (SiPDs) are widely used in NIR applications; however, their scalability is limited by their crystalline properties. Organic photodetectors (OPDs) have attracted attention for NIR applications owing to their scalability, low-temperature processing, and notably low dark current density (JD), which is similar to that of SiPDs. However, the still high JD (at NIR band) and few measurements of noise equivalent powers (NEPs) pose challenges for accurate performance comparisons. This study addresses these issues by quantitatively characterizing the performance matrix and JD generation mechanism using electron-blocking layers (EBLs) in OPDs. The energy offset at an EBL/photosensitive layer interface determines the thermal activation energy and directly affects JD. A newly synthesized EBL (3PAFBr) substantially enhances the interfacial energy barrier by forming a homogeneous contact owing to the improved anchoring ability of 3PAFBr. As a result, the OPD with 3PAFBr yields a noise current of 852 aA (JD = 12.3 fA cm⁻2 at V → -0.1 V) and several femtowatt-scale NEPs. As far as it is known, this is an ultralow of JD in NIR OPDs. This emphasizes the necessity for quantitative performance characterization
Beschreibung:Date Revised 10.10.2024
published: Print-Electronic
ErratumIn: Adv Mater. 2024 Oct;36(41):e2409268. doi: 10.1002/adma.202409268. - PMID 39148159
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.202403647