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240503s2024 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202402324
|2 doi
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|a pubmed24n1482.xml
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|a (NLM)38696823
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|a DE-627
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|a eng
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|a Ma, Baochen
|e verfasserin
|4 aut
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|a Stable Oxyhalide-Nitride Fast Ionic Conductors for All-Solid-State Li Metal Batteries
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|c 2024
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 25.07.2024
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2024 Wiley‐VCH GmbH.
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|a Rechargeable all-solid-state lithium metal batteries (ASSLMBs) utilizing inorganic solid-state electrolytes (SSEs) are promising for electric vehicles and large-scale grid energy storage. However, the Li dendrite growth in SSEs still constrains the practical utility of ASSLMBs. To achieve a high dendrite-suppression capability, SSEs must be chemically stable with Li, possess fast Li transfer kinetics, and exhibit high interface energy. Herein, a class of low-cost, eco-friendly, and sustainable oxyhalide-nitride solid electrolytes (ONSEs), denoted as LixNyIz-qLiOH (where x = 3y + z, 0 ≤ q ≤ 0.75), is designed to fulfill all the requirements. As-prepared ONSEs demonstrate chemically stable against Li and high interface energy (>43.08 meV Å-2), effectively restraining Li dendrite growth and the self-degradation at electrode interfaces. Furthermore, improved thermodynamic oxidation stability of ONSEs (>3 V vs Li+/Li, 0.45 V for pure Li3N), arising from the increased ionicity of Li─N bonds, contributes to the stability in ASSLMBs. As a proof-of-concept, the optimized ONSEs possess high ionic conductivity of 0.52 mS cm-1 and achieve long-term cycling of Li||Li symmetric cell for over 500 h. When coupled with the Li3InCl6 SSE for high-voltage cathodes, the bilayer oxyhalide-nitride/Li3InCl6 electrolyte imparts 90% capacity retention over 500 cycles for Li||1 mAh cm-2 LiCoO2 cells
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|a Journal Article
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|a Li metal compatibility
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|a all solid‐state Li metal battery
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|a solid‐state electrolyte
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|a stable oxyhalide‐nitride fast ionic conductor
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|a Li, Ruhong
|e verfasserin
|4 aut
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|a Zhu, Haotian
|e verfasserin
|4 aut
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|a Zhou, Tao
|e verfasserin
|4 aut
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|a Lv, Ling
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|4 aut
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|a Zhang, Haikuo
|e verfasserin
|4 aut
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|a Zhang, Shuoqing
|e verfasserin
|4 aut
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|a Chen, Long
|e verfasserin
|4 aut
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|a Wang, Jinze
|e verfasserin
|4 aut
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|a Xiao, Xuezhang
|e verfasserin
|4 aut
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|a Deng, Tao
|e verfasserin
|4 aut
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|a Chen, Lixin
|e verfasserin
|4 aut
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|a Wang, Chunsheng
|e verfasserin
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|a Fan, Xiulin
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 36(2024), 30 vom: 02. Juli, Seite e2402324
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:36
|g year:2024
|g number:30
|g day:02
|g month:07
|g pages:e2402324
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|u http://dx.doi.org/10.1002/adma.202402324
|3 Volltext
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