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240501s2024 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202402232
|2 doi
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|a pubmed24n1474.xml
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|a DE-627
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|e rakwb
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|a eng
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| 100 |
1 |
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|a Gong, Jialin
|e verfasserin
|4 aut
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| 245 |
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|a Hidden Real Topology and Unusual Magnetoelectric Responses in Two-Dimensional Antiferromagnets
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|c 2024
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|a Date Revised 18.07.2024
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2024 The Authors. Advanced Materials published by Wiley‐VCH GmbH.
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|a Recently, the real topology has been attracting widespread interest in two dimensions (2D). Here, based on first-principles calculations and theoretical analysis, the monolayer Cr2Se2O (ML-CrSeO) is revealed as the first material example of a 2D antiferromagnetic (AFM) real Chern insulator (RCI) with topologically protected corner states. Unlike previous RCIs, it is found that the real topology of the ML-CrSeO is rooted in one certain mirror subsystem of the two spin channels, and cannot be directly obtained from all the valence bands in each spin channel as commonly believed. In particular, due to antiferromagnetism, the corner modes in ML-CrSeO exhibit strong corner-contrasted spin polarization, leading to spin-corner coupling (SCC). This SCC enables a direct connection between spin space and real space. Consequently, large and switchable net magnetization can be induced in the ML-CrSeO nanodisk by electrostatic means, such as potential step and in-plane electric field, and the corresponding magnetoelectric responses behave like a sign function, distinguished from that of the conventional multiferroic materials. This work considerably broadens the candidate range of RCI materials, and opens up a new direction for topo-spintronics and 2D AFM materials research
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|a Journal Article
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|a antiferromagnets
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4 |
|a hidden real topology
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| 650 |
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4 |
|a spin–corner coupling
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| 650 |
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4 |
|a two dimensions
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| 650 |
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4 |
|a unusual magnetoelectric responses
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| 700 |
1 |
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|a Wang, Yang
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Han, Yilin
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Cheng, Zhenxiang
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Xiaotian
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Yu, Zhi-Ming
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Yao, Yugui
|e verfasserin
|4 aut
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| 773 |
0 |
8 |
|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 36(2024), 29 vom: 14. Juli, Seite e2402232
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
1 |
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|g volume:36
|g year:2024
|g number:29
|g day:14
|g month:07
|g pages:e2402232
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|u http://dx.doi.org/10.1002/adma.202402232
|3 Volltext
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