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240229s2024 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202313753
|2 doi
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|a pubmed24n1417.xml
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|a DE-627
|b ger
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|e rakwb
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|a eng
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| 100 |
1 |
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|a Zhang, Ruiling
|e verfasserin
|4 aut
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| 245 |
1 |
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|a Extreme Thermal Insulation and Tradeoff of Thermal Transport Mechanisms between Graphene and WS2 Monolayers
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|c 2024
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|a Date Revised 24.05.2024
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2024 Wiley‐VCH GmbH.
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|a Controlling and understanding the heat flow at a nanometer scale are challenging, but important for fundamental science and applications. Two-dimensional (2D) layered materials provide perhaps the ultimate solution for meeting these challenges. While there have been reports of low thermal conductivities (several mW m-1 K-1) across the 2D heterostructures, phonon-dominant thermal transport remains strong due to the nearly-ideal contact between the layers. Here, this work experimentally explores the heat transport mechanisms by increasing the interlayer distance from perfect contact to a few nanometers and demonstrates that the phonon-dominated thermal conductivity across the WS2/graphene interface decreases further with the increasing interlayer distance until the air-dominated thermal conductivity increases again. This work finds that the resulting tradeoff of the two heat conduction mechanisms leads to the existence of a minimum thermal conductivity at 2.11 nm of 1.41 × 10-5 W m-1 K-1, which is two thousandths of the smallest value reported previously. This work provides an effective methodology for engineering thermal insulation structures and understanding heat transport at the ultimate small scales
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4 |
|a Journal Article
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| 650 |
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4 |
|a 2D van der Waals heterostructures
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| 650 |
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4 |
|a Raman spectroscopy
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| 650 |
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4 |
|a air heat conduction
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| 650 |
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4 |
|a interlayer phonon coupling
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| 650 |
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4 |
|a thermal insulation
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| 700 |
1 |
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|a Gan, Lin
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhang, Danyang
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Sun, Hao
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Li, Yongzhuo
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Ning, Cun-Zheng
|e verfasserin
|4 aut
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| 773 |
0 |
8 |
|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 36(2024), 21 vom: 23. Mai, Seite e2313753
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
1 |
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|g volume:36
|g year:2024
|g number:21
|g day:23
|g month:05
|g pages:e2313753
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| 856 |
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|u http://dx.doi.org/10.1002/adma.202313753
|3 Volltext
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