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240209s2024 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202313134
|2 doi
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|a pubmed25n1226.xml
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|a (DE-627)NLM368209040
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|a (NLM)38331419
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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|a Zhang, Shukui
|e verfasserin
|4 aut
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| 245 |
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|a Black Arsenic Phosphorus Mid-Wave Infrared Barrier Detector with High Detectivity at Room Temperature
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|c 2024
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Revised 24.05.2024
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2024 Wiley‐VCH GmbH.
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|a The barrier structure is designed to enhance the operating temperature of the infrared detector, thereby improving the efficiency of collecting photogenerated carriers and reducing dark current generation, without suppressing the photocurrent. However, the development of barrier detectors using conventional materials is limited due to the strict requirements for lattice and band matching. In this study, a high-performance unipolar barrier detector is designed utilizing a black arsenic phosphorus/molybdenum disulfide/black phosphorus van der Waals heterojunction. The device exhibits a broad response bandwidth ranging from visible light to mid-wave infrared (520 nm to 4.6 µm), with a blackbody detectivity of 2.7 × 1010 cmHz-1/2 W-1 in the mid-wave infrared range at room temperature. Moreover, the optical absorption anisotropy of black arsenic phosphorus enables polarization resolution detection, achieving a polarization extinction ratio of 35.5 at 4.6 µm. Mid-wave infrared imaging of the device is successfully demonstrated at room temperature, highlighting the significant potential of barrier devices based on van der Waals heterojunctions in mid-wave infrared detection
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|a Journal Article
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|a barrier detector
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|a black arsenic phosphorus
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|a high operation temperature
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4 |
|a mid‐wave photodetector
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| 650 |
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4 |
|a van der Waals heterojunctions
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1 |
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|a Huang, Xinning
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Chen, Yan
|e verfasserin
|4 aut
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1 |
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|a Yin, Ruotong
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Hailu
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Xu, Tengfei
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Guo, Jiaoyang
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Xingjun
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Lin, Tie
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Shen, Hong
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Ge, Jun
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Meng, Xiangjian
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Hu, Weida
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Dai, Ning
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Xudong
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Chu, Junhao
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Jianlu
|e verfasserin
|4 aut
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| 773 |
0 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 36(2024), 21 vom: 31. Mai, Seite e2313134
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnas
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| 773 |
1 |
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|g volume:36
|g year:2024
|g number:21
|g day:31
|g month:05
|g pages:e2313134
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| 856 |
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|u http://dx.doi.org/10.1002/adma.202313134
|3 Volltext
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