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240114s2024 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202310157
|2 doi
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|a pubmed24n1373.xml
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|a (DE-627)NLM366892452
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|a (NLM)38198654
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
1 |
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|a Quill, Tyler J
|e verfasserin
|4 aut
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|a Charge Carrier Induced Structural Ordering And Disordering in Organic Mixed Ionic Electronic Conductors
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|c 2024
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Revised 11.04.2024
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2024 Wiley‐VCH GmbH.
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|a Operational stability underpins the successful application of organic mixed ionic-electronic conductors (OMIECs) in a wide range of fields, including biosensing, neuromorphic computing, and wearable electronics. In this work, both the operation and stability of a p-type OMIEC material of various molecular weights are investigated. Electrochemical transistor measurements reveal that device operation is very stable for at least 300 charging/discharging cycles independent of molecular weight, provided the charge density is kept below the threshold where strong charge-charge interactions become likely. When electrochemically charged to higher charge densities, an increase in device hysteresis and a decrease in conductivity due to a drop in the hole mobility arising from long-range microstructural disruptions are observed. By employing operando X-ray scattering techniques, two regimes of polaron-induced structural changes are found: 1) polaron-induced structural ordering at low carrier densities, and 2) irreversible structural disordering that disrupts charge transport at high carrier densities, where charge-charge interactions are significant. These operando measurements also reveal that the transfer curve hysteresis at high carrier densities is accompanied by an analogous structural hysteresis, providing a microstructural basis for such instabilities. This work provides a mechanistic understanding of the structural dynamics and material instabilities of OMIEC materials during device operation
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|a Journal Article
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|a electrochemical transistors
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|a microstructural stability
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|a operando X‐ray scattering
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|a organic mixed conductors
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|a organic semiconductors
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|a LeCroy, Garrett
|e verfasserin
|4 aut
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1 |
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|a Marks, Adam
|e verfasserin
|4 aut
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1 |
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|a Hesse, Sarah A
|e verfasserin
|4 aut
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|a Thiburce, Quentin
|e verfasserin
|4 aut
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1 |
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|a McCulloch, Iain
|e verfasserin
|4 aut
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|a Tassone, Christopher J
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Takacs, Christopher J
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Giovannitti, Alexander
|e verfasserin
|4 aut
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| 700 |
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|a Salleo, Alberto
|e verfasserin
|4 aut
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| 773 |
0 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 36(2024), 15 vom: 10. Apr., Seite e2310157
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:36
|g year:2024
|g number:15
|g day:10
|g month:04
|g pages:e2310157
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|u http://dx.doi.org/10.1002/adma.202310157
|3 Volltext
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