Charge Carrier Induced Structural Ordering And Disordering in Organic Mixed Ionic Electronic Conductors

© 2024 Wiley‐VCH GmbH.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 36(2024), 15 vom: 10. Apr., Seite e2310157
1. Verfasser: Quill, Tyler J (VerfasserIn)
Weitere Verfasser: LeCroy, Garrett, Marks, Adam, Hesse, Sarah A, Thiburce, Quentin, McCulloch, Iain, Tassone, Christopher J, Takacs, Christopher J, Giovannitti, Alexander, Salleo, Alberto
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2024
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article electrochemical transistors microstructural stability operando X‐ray scattering organic mixed conductors organic semiconductors
Beschreibung
Zusammenfassung:© 2024 Wiley‐VCH GmbH.
Operational stability underpins the successful application of organic mixed ionic-electronic conductors (OMIECs) in a wide range of fields, including biosensing, neuromorphic computing, and wearable electronics. In this work, both the operation and stability of a p-type OMIEC material of various molecular weights are investigated. Electrochemical transistor measurements reveal that device operation is very stable for at least 300 charging/discharging cycles independent of molecular weight, provided the charge density is kept below the threshold where strong charge-charge interactions become likely. When electrochemically charged to higher charge densities, an increase in device hysteresis and a decrease in conductivity due to a drop in the hole mobility arising from long-range microstructural disruptions are observed. By employing operando X-ray scattering techniques, two regimes of polaron-induced structural changes are found: 1) polaron-induced structural ordering at low carrier densities, and 2) irreversible structural disordering that disrupts charge transport at high carrier densities, where charge-charge interactions are significant. These operando measurements also reveal that the transfer curve hysteresis at high carrier densities is accompanied by an analogous structural hysteresis, providing a microstructural basis for such instabilities. This work provides a mechanistic understanding of the structural dynamics and material instabilities of OMIEC materials during device operation
Beschreibung:Date Revised 11.04.2024
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.202310157