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240108s2024 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202309193
|2 doi
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|a pubmed24n1366.xml
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|a eng
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|a Zhang, Weihai
|e verfasserin
|4 aut
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|a B-Site Co-Doping Coupled with Additive Passivation Pushes the Efficiency of Pb-Sn Mixed Inorganic Perovskite Solar Cells to Over 17
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|c 2024
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|a Text
|b txt
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|a ƒaComputermedien
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|a ƒa Online-Ressource
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|a Date Revised 04.04.2024
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2023 Wiley‐VCH GmbH.
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|a Pb-Sn mixed inorganic perovskite solar cells (PSCs) have garnered increasing interest as a viable solution to mitigate the thermal instability and lead toxicity of hybrid lead-based PSCs. However, the relatively poor structural stability and low device efficiency hinder its further development. Herein, high-performance manganese (Mn)-doped Pb-Sn-Mn-based inorganic perovskite solar cells (PSCs) are successfully developed by introducing Benzhydroxamic Acid (BHA) as multifunctional additive. The incorporation of smaller divalent Mn cations contributes to a contraction of the perovskite crystal, leading to an improvement in structural stability. The BHA additive containing a reductive hydroxamic acid group (O═C-NHOH) not only mitigates the notorious oxidation of Sn2+ but also interacts with metal ions at the B-site and passivates related defects. This results in films with high crystallinity and low defect density. Moreover, the BHA molecules tend to introduce a near-vertical dipole moment that parallels the built-in electric field, thus facilitating charge carrier extraction. Consequently, the resulting device delivers a champion PCE as high as 17.12%, which represents the highest reported efficiency for Pb-Sn-based inorganic PSCs thus far. Furthermore, the BHA molecule provides an in situ encapsulation of the perovskite grain boundary, resulting in significant enhancement of device air stability
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|a Journal Article
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|a co‐doping
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|a high efficiency
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|a in situ encapsulation
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|a inorganic perovskite
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|a lead‐reduced
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|a Liu, Heng
|e verfasserin
|4 aut
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|a Qu, Yating
|e verfasserin
|4 aut
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|a Cui, Jieshun
|e verfasserin
|4 aut
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|a Zhang, Wenjun
|e verfasserin
|4 aut
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|a Shi, Tingting
|e verfasserin
|4 aut
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| 700 |
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|a Wang, Hsing-Lin
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 36(2024), 14 vom: 29. Apr., Seite e2309193
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:36
|g year:2024
|g number:14
|g day:29
|g month:04
|g pages:e2309193
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|u http://dx.doi.org/10.1002/adma.202309193
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