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231227s2024 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202309171
|2 doi
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|a pubmed24n1353.xml
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|a (DE-627)NLM365949744
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|a (NLM)38104281
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
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|a Niu, Tingting
|e verfasserin
|4 aut
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|a Phase-Pure α-FAPbI3 Perovskite Solar Cells via Activating Lead-Iodine Frameworks
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|c 2024
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|a Text
|b txt
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|a Date Revised 28.03.2024
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2023 Wiley‐VCH GmbH.
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|a Narrow bandgap cubic formamidine perovskite (α-FAPbI3) is widely studied for its potential to achieve record‑breaking efficiency. However, its high preparation difficulty caused by lattice instability is criticized. A popular strategy for stabilizing the α-FAPbI3 lattice is to replace intrinsic FA+ or I- with smaller ions of MA+, Cs+, Rb+, and Br-, whereas this generally leads to broadened optical bandgap and phase separation. Studies show that ions substitution-free phase-pure α-FAPbI3 can achieve intrinsic phase stability. However, the challenging preparation of high-quality films has hindered its further development. Here, a facile synthesis of high-quality MA+, Cs+, Rb+, and Br--free phase-pure α-FAPbI3 perovskite film by a new solution modification strategy is reported. This enables the activation of lead-iodine (Pb─I) frameworks by forming the coated Pb⋯O network, thus simultaneously promoting spontaneous homogeneous nucleation and rapid phase transition from δ to α phase. As a result, the efficient and stable phase-pure α-FAPbI3 PSC is obtained through a one-step method without antisolvent treatment, with a record efficiency of 23.15% and excellent long-term operating stability for 500 h under continuous light stress
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|a Journal Article
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|a Pb─I frameworks
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|a chemical interaction
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|a phase transition
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|a phase‐pure α‐FAPbI3
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|a Chao, Lingfeng
|e verfasserin
|4 aut
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|a Xia, Yingdong
|e verfasserin
|4 aut
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|a Wang, Kaiyu
|e verfasserin
|4 aut
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1 |
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|a Ran, Xueqin
|e verfasserin
|4 aut
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|a Huang, Xiao
|e verfasserin
|4 aut
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|a Chen, Changshun
|e verfasserin
|4 aut
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|a Wang, Jinpei
|e verfasserin
|4 aut
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| 700 |
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|a Li, Deli
|e verfasserin
|4 aut
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1 |
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|a Su, Zhenhuang
|e verfasserin
|4 aut
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|a Hu, Zhelu
|e verfasserin
|4 aut
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|a Gao, Xingyu
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhang, Jing
|e verfasserin
|4 aut
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| 700 |
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|a Chen, Yonghua
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 36(2024), 13 vom: 27. März, Seite e2309171
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:36
|g year:2024
|g number:13
|g day:27
|g month:03
|g pages:e2309171
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|u http://dx.doi.org/10.1002/adma.202309171
|3 Volltext
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|d 36
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