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231226s2024 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202309531
|2 doi
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|a pubmed24n1256.xml
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|a DE-627
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|a eng
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| 100 |
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|a Ji, Seunghyeon
|e verfasserin
|4 aut
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| 245 |
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|a Perovskite Light-Emitting Diode Display Based on MoS2 Backplane Thin-Film Transistors
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|c 2024
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 11.01.2024
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2023 Wiley-VCH GmbH.
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|a The uniform deposition of perovskite light-emitting diodes (PeLEDs) and their integration with backplane thin-film transistors (TFTs) remain challenging for large-area display applications. Herein, an active-matrix PeLED display fabricated via the heterogeneous integration of cesium lead bromide LEDs and molybdenum disulfide (MoS2 )-based TFTs is presented. The single-source evaporation method enables the deposition of highly uniform perovskite thin films over large areas. PeLEDs are integrated with MoS2 TFTs to fabricate an active-matrix PeLED display with an 8 × 8 array, which exhibits excellent brightness control capability and high switching speed. This study demonstrates the potential of PeLEDs as candidates for next-generation displays and presents a novel approach for fabricating optoelectronic devices via the heterogeneous integration of 2D materials and perovskites, thereby paving the way toward the fabrication of practical future optoelectronic systems
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|a Journal Article
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|a 2D materials
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|a active-matrix display
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|a light-emitting diodes
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|a perovskites
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|a single-source evaporation
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| 700 |
1 |
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|a Bae, Sa-Rang
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Hu, Luhing
|e verfasserin
|4 aut
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| 700 |
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|a Hoang, Anh Tuan
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Seol, Myeong Jin
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Hong, Juyeong
|e verfasserin
|4 aut
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| 700 |
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|a Katiyar, Ajit Kumar
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Kim, Beom Jin
|e verfasserin
|4 aut
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| 700 |
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|a Xu, Duo
|e verfasserin
|4 aut
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| 700 |
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|a Kim, Soo Young
|e verfasserin
|4 aut
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| 700 |
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|a Ahn, Jong-Hyun
|e verfasserin
|4 aut
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| 773 |
0 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 36(2024), 2 vom: 28. Jan., Seite e2309531
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:36
|g year:2024
|g number:2
|g day:28
|g month:01
|g pages:e2309531
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|u http://dx.doi.org/10.1002/adma.202309531
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