Perovskite Light-Emitting Diode Display Based on MoS2 Backplane Thin-Film Transistors

© 2023 Wiley-VCH GmbH.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 36(2024), 2 vom: 28. Jan., Seite e2309531
1. Verfasser: Ji, Seunghyeon (VerfasserIn)
Weitere Verfasser: Bae, Sa-Rang, Hu, Luhing, Hoang, Anh Tuan, Seol, Myeong Jin, Hong, Juyeong, Katiyar, Ajit Kumar, Kim, Beom Jin, Xu, Duo, Kim, Soo Young, Ahn, Jong-Hyun
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2024
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article 2D materials active-matrix display light-emitting diodes perovskites single-source evaporation
Beschreibung
Zusammenfassung:© 2023 Wiley-VCH GmbH.
The uniform deposition of perovskite light-emitting diodes (PeLEDs) and their integration with backplane thin-film transistors (TFTs) remain challenging for large-area display applications. Herein, an active-matrix PeLED display fabricated via the heterogeneous integration of cesium lead bromide LEDs and molybdenum disulfide (MoS2 )-based TFTs is presented. The single-source evaporation method enables the deposition of highly uniform perovskite thin films over large areas. PeLEDs are integrated with MoS2 TFTs to fabricate an active-matrix PeLED display with an 8 × 8 array, which exhibits excellent brightness control capability and high switching speed. This study demonstrates the potential of PeLEDs as candidates for next-generation displays and presents a novel approach for fabricating optoelectronic devices via the heterogeneous integration of 2D materials and perovskites, thereby paving the way toward the fabrication of practical future optoelectronic systems
Beschreibung:Date Revised 11.01.2024
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.202309531