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231226s2023 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202309099
|2 doi
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|a pubmed24n1241.xml
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|a (DE-627)NLM36445346X
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|a (NLM)37953691
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|a DE-627
|b ger
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|e rakwb
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|a eng
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|a Wang, Han
|e verfasserin
|4 aut
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|a Adaptive Neural Activation and Neuromorphic Processing via Drain-Injection Threshold-Switching Float Gate Transistor Memory
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|c 2023
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|a Text
|b txt
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Completed 28.12.2023
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|a Date Revised 28.12.2023
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|a published: Print-Electronic
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|a Citation Status MEDLINE
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|a © 2023 Wiley-VCH GmbH.
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|a Hetero-modulated neural activation is vital for adaptive information processing and learning that occurs in brain. To implement brain-inspired adaptive processing, previously various neurotransistors oriented for synaptic functions are extensively explored, however, the emulation of nonlinear neural activation and hetero-modulated behaviors are not possible due to the lack of threshold switching behavior in a conventional transistor structure. Here, a 2D van der Waals float gate transistor (FGT) that exhibits steep threshold switching behavior, and the emulation of hetero-modulated neuron functions (integrate-and-fire, sigmoid type activation) for adaptive sensory processing, are reported. Unlike conventional FGTs, the threshold switching behavior stems from impact ionization in channel and the coupled charge injection to float gate. When a threshold is met, a sub-30 mV dec-1 increase of transistor conductance by more than four orders is triggered with a typical switch time of approximately milliseconds. Essentially, by feeding light sensing signal as the modulation input, it is demonstrated that two typical tasks that rely on adaptive neural activation, including collision avoidance and adaptive visual perception, can be realized. These results may shed light on the emulation of rich hetero-modulating behaviors in biological neurons and the realization of biomimetic neuromorphic processing at low hardware cost
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|a Journal Article
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|a adaptive sensory processing
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|a float gate transistor
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|a hetero-modulated neural activation
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|a threshold switching behavior
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|a Lu, Yuanlong
|e verfasserin
|4 aut
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|a Liu, Shangbo
|e verfasserin
|4 aut
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|a Yu, Jun
|e verfasserin
|4 aut
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|a Hu, Man
|e verfasserin
|4 aut
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|a Li, Sainan
|e verfasserin
|4 aut
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|a Yang, Rui
|e verfasserin
|4 aut
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|a Watanabe, Kenji
|e verfasserin
|4 aut
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|a Taniguchi, Takashi
|e verfasserin
|4 aut
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| 700 |
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|a Ma, Ying
|e verfasserin
|4 aut
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|a Miao, Xiangshui
|e verfasserin
|4 aut
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|a Zhuge, Fuwei
|e verfasserin
|4 aut
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|a He, Yuhui
|e verfasserin
|4 aut
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|a Zhai, Tianyou
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 35(2023), 52 vom: 02. Dez., Seite e2309099
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:35
|g year:2023
|g number:52
|g day:02
|g month:12
|g pages:e2309099
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|u http://dx.doi.org/10.1002/adma.202309099
|3 Volltext
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