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231226s2024 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202308301
|2 doi
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|a pubmed24n1270.xml
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|a (NLM)37929619
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|a DE-627
|b ger
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|a eng
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|a Lim, Taebin
|e verfasserin
|4 aut
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|a Large-Area Growth of Ferroelectric 2D γ-In2 Se3 Semiconductor by Spray Pyrolysis for Next-Generation Memory
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|c 2024
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|a Date Revised 25.01.2024
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2023 Wiley-VCH GmbH.
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|a In2 Se3 , 2D ferroelectric-semiconductor, is a promising candidate for next-generation memory device because of its outstanding electrical properties. However, the large-area manufacturing of In2 Se3 is still a big challenge. In this work, spray pyrolysis technique is introduced for the growth of large-area In2 Se3 thin film. A polycrystalline γ-In2 Se3 layer can be grown on 15 cm × 15 cm glasss at the substrate temperature of 275 °C. The In2 Se3 ferroelectric-semiconductor field effect transistor (FeS-FET) on glass substrate demonstrates a large hysteresis window of 40.3 V at the ±40 V of gate voltage sweep and excellent uniformity. The FeS-FET exhibits an electron field effect mobility of 0.97 cm2 V-1 s-1 and an on/off current ratio of >107 in the transfer curves. The memory behavior of the large-area, In2 Se3 FeS-FETs for next-generation memory is demonstrated
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|a Journal Article
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|a ferroelectric-semiconductor field effect transistor
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4 |
|a indium selenide
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|a large-area growth
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|a memory
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|a spray pyrolysis deposition
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1 |
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|a Lee, Jae Heon
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Kim, Donggyu
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Bae, Jinbaek
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Jung, Seungchae
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Yang, Sang Mo
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Jang, Joon I
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Jang, Jin
|e verfasserin
|4 aut
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| 773 |
0 |
8 |
|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 36(2024), 4 vom: 24. Jan., Seite e2308301
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:36
|g year:2024
|g number:4
|g day:24
|g month:01
|g pages:e2308301
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|u http://dx.doi.org/10.1002/adma.202308301
|3 Volltext
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