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231226s2023 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202307206
|2 doi
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|a pubmed24n1234.xml
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|a (DE-627)NLM364152508
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|a (NLM)37923398
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
1 |
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|a Kwon, Yonghyun Albert
|e verfasserin
|4 aut
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| 245 |
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|a Approaching Theoretical Limits in the Performance of Printed P-Type CuI Transistors via Room Temperature Vacancy Engineering
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|c 2023
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 21.12.2023
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2023 Wiley-VCH GmbH.
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|a Development of a novel high performing inorganic p-type thin film transistor could pave the way for new transparent electronic devices. This complements the widely commercialized n-type counterparts, indium-gallium-zinc-oxide (IGZO). Of the few potential candidates, copper monoiodide (CuI) stands out. It boasts visible light transparency and high intrinsic hole mobility (>40 cm2 V-1 s-1 ), and is suitable for various low-temperature processes. However, the performance of reported CuI transistors is still below expected mobility, mainly due to the uncontrolled excess charge- and defect-scattering from thermodynamically favored formation of copper and iodine vacancies. Here, a solution-processed CuI transistor with a significantly improved mobility is reported. This enhancement is achieved through a room-temperature vacancy-engineering processing strategy on high-k dielectrics, sodium-embedded alumina. A thorough set of chemical, structural, optical, and electrical analyses elucidates the processing-dependent vacancy-modulation and its corresponding transport mechanism in CuI. This encompasses defect- and phonon-scattering, as well as the delocalization of charges in crystalline domains. As a result, the optimized CuI thin film transistors exhibit exceptionally high hole mobility of 21.6 ± 4.5 cm2 V-1 s-1 . Further, the successful operation of IGZO-CuI complementary logic gates confirms the applicability of the device
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|a Journal Article
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|a complementary metal-oxide-semiconductor logic circuits
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|a inorganic p-type semiconductors
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|a solution-processed electronics
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4 |
|a transparent electronics
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| 700 |
1 |
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|a Kim, Jin Hyeon
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Barma, Sunil V
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Lee, Keun Hyung
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Jo, Sae Byeok
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Cho, Jeong Ho
|e verfasserin
|4 aut
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| 773 |
0 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 35(2023), 51 vom: 15. Dez., Seite e2307206
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
1 |
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|g volume:35
|g year:2023
|g number:51
|g day:15
|g month:12
|g pages:e2307206
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| 856 |
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|u http://dx.doi.org/10.1002/adma.202307206
|3 Volltext
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|d 35
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