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|a 10.1002/adma.202305513
|2 doi
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|a pubmed24n1263.xml
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|a (DE-627)NLM363712135
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|a (NLM)37878999
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|a DE-627
|b ger
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|a eng
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|a Zhang, Xiaojie
|e verfasserin
|4 aut
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|a Heterointerface Design of Perovskite Single Crystals for High-Performance X-Ray Imaging
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|c 2024
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|a Text
|b txt
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 18.01.2024
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2023 Wiley-VCH GmbH.
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|a Metal halide perovskite single crystals (MHP-SCs) are known for their facile fabrication into large sizes using inexpensive solution methods. Owing to their combination of large mobility-lifetime products and strong X-ray absorption, they are considered promising materials for efficient X-ray detection. However, they suffer from large dark currents and severe ion migration, which limit their sensitivity and stability in critical X-ray detection applications. Herein, a heterointerface design is proposed to reduce both the dark current and ion migration by forming a heterojunction. In addition, the carrier transport performance is significantly improved using heterointerface engineering by designing a gradient band structure in the SCs. The SC heterojunction detectors exhibit a high sensitivity of 3.98 × 105 µC Gyair -1 cm-2 with a low detection limit of 12.2 nGyair s-1 and a high spatial resolution of 10.2 lp mm-1 during imaging. These values are among the highest reported for state-of-the-art MHP X-ray detectors. Moreover, the detectors show excellent stability under continuous X-ray irradiation and maintainclear X-ray imaging after 240 d. This study provides novel insights into the design and fabrication of X-ray detectors with high detection efficiency and stability, which are beneficial for developing inexpensive, high-resolution X-ray imaging equipment
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|a Journal Article
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|a X-ray detection
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|a halide perovskite
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|a heterointerface design
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|a single crystal
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|a Chu, Depeng
|e verfasserin
|4 aut
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|a Jia, Binxia
|e verfasserin
|4 aut
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|a Zhao, Zeqin
|e verfasserin
|4 aut
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|a Pi, Jiacheng
|e verfasserin
|4 aut
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|a Yang, Zhou
|e verfasserin
|4 aut
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|a Li, Yaohui
|e verfasserin
|4 aut
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|a Hao, Jinglu
|e verfasserin
|4 aut
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|a Shi, Ruixin
|e verfasserin
|4 aut
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|a Dong, Xiaofeng
|e verfasserin
|4 aut
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|a Liang, Yuqian
|e verfasserin
|4 aut
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|a Feng, Jiangshan
|e verfasserin
|4 aut
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|a Najar, Adel
|e verfasserin
|4 aut
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|a Liu, Yucheng
|e verfasserin
|4 aut
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|a Liu, Shengzhong Frank
|e verfasserin
|4 aut
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 36(2024), 3 vom: 17. Jan., Seite e2305513
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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|g volume:36
|g year:2024
|g number:3
|g day:17
|g month:01
|g pages:e2305513
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|u http://dx.doi.org/10.1002/adma.202305513
|3 Volltext
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