Controlled Growth of Single-Crystal Graphene Wafers on Twin-Boundary-Free Cu(111) Substrates

Controlled Growth of Single-Crystal Graphene Wafers on Twin-Boundary-Free Cu(111) Substrates

© 2023 Wiley‐VCH GmbH.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 36(2024), 17 vom: 01. Apr., Seite e2308802
1. Verfasser: Zhu, Yeshu (VerfasserIn)
Weitere Verfasser: Zhang, Jincan, Cheng, Ting, Tang, Jilin, Duan, Hongwei, Hu, Zhaoning, Shao, Jiaxin, Wang, Shiwei, Wei, Mingyue, Wu, Haotian, Li, Ang, Li, Sheng, Balci, Osman, Shinde, Sachin M, Ramezani, Hamideh, Wang, Luda, Lin, Li, Ferrari, Andrea C, Yakobson, Boris I, Peng, Hailin, Jia, Kaicheng, Liu, Zhongfan
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2024
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article CVD graphene graphene wafer single‐crystal Cu(111)
Beschreibung
Zusammenfassung:© 2023 Wiley‐VCH GmbH.
Single-crystal graphene (SCG) wafers are needed to enable mass-electronics and optoelectronics owing to their excellent properties and compatibility with silicon-based technology. Controlled synthesis of high-quality SCG wafers can be done exploiting single-crystal Cu(111) substrates as epitaxial growth substrates recently. However, current Cu(111) films prepared by magnetron sputtering on single-crystal sapphire wafers still suffer from in-plane twin boundaries, which degrade the SCG chemical vapor deposition. Here, it is shown how to eliminate twin boundaries on Cu and achieve 4 in. Cu(111) wafers with ≈95% crystallinity. The introduction of a temperature gradient on Cu films with designed texture during annealing drives abnormal grain growth across the whole Cu wafer. In-plane twin boundaries are eliminated via migration of out-of-plane grain boundaries. SCG wafers grown on the resulting single-crystal Cu(111) substrates exhibit improved crystallinity with >97% aligned graphene domains. As-synthesized SCG wafers exhibit an average carrier mobility up to 7284 cm2 V-1 s-1 at room temperature from 103 devices and a uniform sheet resistance with only 5% deviation in 4 in. region
Beschreibung:Date Revised 25.04.2024
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.202308802