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231226s2024 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202302140
|2 doi
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|a pubmed24n1256.xml
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|a (DE-627)NLM362953414
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|a (NLM)37801733
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|a DE-627
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|a eng
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|a Zhou, Wei
|e verfasserin
|4 aut
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|a Sb-Doped Cs3 TbCl6 Nanocrystals for Highly Efficient Narrow-Band Green Emission and X-Ray Imaging
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|c 2024
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 11.01.2024
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2023 Wiley-VCH GmbH.
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|a Metal halide nanocrystals (NCs) with high photoluminescence quantum yield (PLQY) are desirable for lighting, display, and X-ray detection. Herein, the novel lanthanide-based halide NCs are committed to designing and optimizing the optical and scintillating properties, so as to unravel the PL origin, exciton dynamics, and optoelectronic applications. Sb-doped zero-dimensional (0D) Cs3 TbCl6 NCs exhibit a green emission with a narrow full width of half maximum of 8.6 nm, and the best PLQY of 48.1% is about three times higher than that of undoped NCs. Experiments and theoretical calculations indicate that 0D crystalline and electronic structures make the exciton highly localized on [TbCl6 ]3- octahedron, which boosts the Cl- -Tb3+ charge transfer process, thus resulting in bright Tb3+ emission. More importantly, the introduction of Sb3+ not only facilitates the photon absorption transition, but also builds an effective thermally boosting energy transfer channel assisted by [SbCl6 ]3- -induced self-trapped state, which is responsible for the PL enhancement. The high luminescence efficiency and negligible self-absorption of the Cs3 TbCl6 : Sb nanoscintillator enable a more sensitive X-ray detection response compared with undoped sample. The study opens a new perspective to deeply understand the excited state dynamics of metal halide NCs, which helps to design high-performance luminescent lanthanide-based nanomaterials
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|a Journal Article
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|a X-ray imaging nanoscintillators
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|a lanthanide chloride nanocrystals
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|a localized electronic structure
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|a narrow-band green emission
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|a thermally boosting energy transfer
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|a Yu, Yang
|e verfasserin
|4 aut
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|a Han, Peigeng
|e verfasserin
|4 aut
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|a Li, Cheng
|e verfasserin
|4 aut
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|a Wu, Tong
|e verfasserin
|4 aut
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|a Ding, Zhiling
|e verfasserin
|4 aut
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|a Liu, Runze
|e verfasserin
|4 aut
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|a Zhang, Ruiling
|e verfasserin
|4 aut
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|a Luo, Cheng
|e verfasserin
|4 aut
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|a Li, Hui
|e verfasserin
|4 aut
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|a Zhao, Kun
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|4 aut
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|a Han, Keli
|e verfasserin
|4 aut
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|a Lu, Ruifeng
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 36(2024), 2 vom: 01. Jan., Seite e2302140
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:36
|g year:2024
|g number:2
|g day:01
|g month:01
|g pages:e2302140
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|u http://dx.doi.org/10.1002/adma.202302140
|3 Volltext
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