Enhanced Removal of Photoresist Films through Swelling and Dewetting Using Pluronic Surfactants

Organic photoresist coatings, primarily composed of resins, are commonly used in the electronics industry to protect inorganic underlayers. Conventional photoresist strippers, such as amine-type agents, have shown high removal performance but led to environmental impact and substrate corrosiveness....

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Veröffentlicht in:Langmuir : the ACS journal of surfaces and colloids. - 1999. - 39(2023), 41 vom: 17. Okt., Seite 14670-14679
1. Verfasser: Hanzawa, Masaki (VerfasserIn)
Weitere Verfasser: Ogura, Taku, Akamatsu, Masaaki, Sakai, Kenichi, Sakai, Hideki
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2023
Zugriff auf das übergeordnete Werk:Langmuir : the ACS journal of surfaces and colloids
Schlagworte:Journal Article
LEADER 01000naa a22002652 4500
001 NLM362908478
003 DE-627
005 20231226092225.0
007 cr uuu---uuuuu
008 231226s2023 xx |||||o 00| ||eng c
024 7 |a 10.1021/acs.langmuir.3c02034  |2 doi 
028 5 2 |a pubmed24n1209.xml 
035 |a (DE-627)NLM362908478 
035 |a (NLM)37797199 
040 |a DE-627  |b ger  |c DE-627  |e rakwb 
041 |a eng 
100 1 |a Hanzawa, Masaki  |e verfasserin  |4 aut 
245 1 0 |a Enhanced Removal of Photoresist Films through Swelling and Dewetting Using Pluronic Surfactants 
264 1 |c 2023 
336 |a Text  |b txt  |2 rdacontent 
337 |a ƒaComputermedien  |b c  |2 rdamedia 
338 |a ƒa Online-Ressource  |b cr  |2 rdacarrier 
500 |a Date Revised 21.10.2023 
500 |a published: Print-Electronic 
500 |a Citation Status PubMed-not-MEDLINE 
520 |a Organic photoresist coatings, primarily composed of resins, are commonly used in the electronics industry to protect inorganic underlayers. Conventional photoresist strippers, such as amine-type agents, have shown high removal performance but led to environmental impact and substrate corrosiveness. Therefore, this trade-off must be addressed. In this study, we characterized the removal mechanism of a photoresist film using a nonionic triblock Pluronic surfactant [poly(ethylene oxide)-poly(propylene oxide)-poly(ethylene oxide)] in a ternary mixture of ethylene carbonate (EC), propylene carbonate (PC), and water. In particular, the removal dynamics determined by using a quartz crystal microbalance with dissipation monitoring was compared with those determined by performing confocal laser scanning microscopy and visual observation to analyze the morphology, adsorption mass, and viscoelasticity of the photoresist film. In the absence of the Pluronic surfactant, the photoresist film in the ternary solvent exhibited a three-step process: (i) film swelling caused by the penetration of a good solvent (EC and PC), (ii) formation of photoresist particles through dewetting, and (iii) particle aggregation on the substrate. This result was correlated to the Hansen solubility parameters. The addition of the Pluronic surfactant not only prevented photoresist aggregation in the third step but also promoted desorption from the substrate. This effect was dependent on the concentration of the Pluronic surfactant, which influenced diffusion to the interface between the photoresist and the bulk solution. Finally, we proposed a novel photoresist stripping mechanism based on the synergy between dewetting driven by an EC/PC-to-water mixture and adsorption by the Pluronic surfactant 
650 4 |a Journal Article 
700 1 |a Ogura, Taku  |e verfasserin  |4 aut 
700 1 |a Akamatsu, Masaaki  |e verfasserin  |4 aut 
700 1 |a Sakai, Kenichi  |e verfasserin  |4 aut 
700 1 |a Sakai, Hideki  |e verfasserin  |4 aut 
773 0 8 |i Enthalten in  |t Langmuir : the ACS journal of surfaces and colloids  |d 1999  |g 39(2023), 41 vom: 17. Okt., Seite 14670-14679  |w (DE-627)NLM098181009  |x 1520-5827  |7 nnns 
773 1 8 |g volume:39  |g year:2023  |g number:41  |g day:17  |g month:10  |g pages:14670-14679 
856 4 0 |u http://dx.doi.org/10.1021/acs.langmuir.3c02034  |3 Volltext 
912 |a GBV_USEFLAG_A 
912 |a SYSFLAG_A 
912 |a GBV_NLM 
912 |a GBV_ILN_22 
912 |a GBV_ILN_350 
912 |a GBV_ILN_721 
951 |a AR 
952 |d 39  |j 2023  |e 41  |b 17  |c 10  |h 14670-14679