Ultrafast Subpicosecond Magnetization of a 2D Ferromagnet

© 2023 The Authors. Advanced Materials published by Wiley-VCH GmbH.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 35(2023), 40 vom: 01. Okt., Seite e2301347
1. Verfasser: Anh, Le Duc (VerfasserIn)
Weitere Verfasser: Kobayashi, Masaki, Takeda, Takahito, Araki, Kohsei, Okano, Ryo, Sumi, Toshihide, Horio, Masafumi, Yamamoto, Kohei, Kubota, Yuya, Owada, Shigeki, Yabashi, Makina, Matsuda, Iwao, Tanaka, Masaaki
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2023
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article 2D magnetism X-ray free-electron laser ferromagnetic semiconductors ultrafast magnetization wavefunction engineering of magnetization
LEADER 01000naa a22002652 4500
001 NLM358115922
003 DE-627
005 20231226074047.0
007 cr uuu---uuuuu
008 231226s2023 xx |||||o 00| ||eng c
024 7 |a 10.1002/adma.202301347  |2 doi 
028 5 2 |a pubmed24n1193.xml 
035 |a (DE-627)NLM358115922 
035 |a (NLM)37309900 
040 |a DE-627  |b ger  |c DE-627  |e rakwb 
041 |a eng 
100 1 |a Anh, Le Duc  |e verfasserin  |4 aut 
245 1 0 |a Ultrafast Subpicosecond Magnetization of a 2D Ferromagnet 
264 1 |c 2023 
336 |a Text  |b txt  |2 rdacontent 
337 |a ƒaComputermedien  |b c  |2 rdamedia 
338 |a ƒa Online-Ressource  |b cr  |2 rdacarrier 
500 |a Date Revised 20.10.2023 
500 |a published: Print-Electronic 
500 |a Citation Status PubMed-not-MEDLINE 
520 |a © 2023 The Authors. Advanced Materials published by Wiley-VCH GmbH. 
520 |a Strong spin-charge interactions in several ferromagnets are expected to lead to subpicosecond (sub-ps) magnetization of the magnetic materials through control of the carrier characteristics via electrical means, which is essential for ultrafast spin-based electronic devices. Thus far, ultrafast control of magnetization has been realized by optically pumping a large number of carriers into the d or f orbitals of a ferromagnet; however, it is extremely challenging to implement by electrical gating. This work demonstrates a new method for sub-ps magnetization manipulation called wavefunction engineering, in which only the spatial distribution (wavefunction) of s (or p) electrons is controlled and no change is required in the total carrier density. Using a ferromagnetic semiconductor (FMS) (In,Fe)As quantum well (QW), instant enhancement, as fast as 600 fs, of the magnetization is observed upon irradiating a femtosecond (fs) laser pulse. Theoretical analysis shows that the instant enhancement of the magnetization is induced when the 2D electron wavefunctions (WFs) in the FMS QW are rapidly moved by a photo-Dember electric field formed by an asymmetric distribution of the photocarriers. Because this WF engineering method can be equivalently implemented by applying a gate electric field, these results open a new way to realize ultrafast magnetic storage and spin-based information processing in present electronic systems 
650 4 |a Journal Article 
650 4 |a 2D magnetism 
650 4 |a X-ray free-electron laser 
650 4 |a ferromagnetic semiconductors 
650 4 |a ultrafast magnetization 
650 4 |a wavefunction engineering of magnetization 
700 1 |a Kobayashi, Masaki  |e verfasserin  |4 aut 
700 1 |a Takeda, Takahito  |e verfasserin  |4 aut 
700 1 |a Araki, Kohsei  |e verfasserin  |4 aut 
700 1 |a Okano, Ryo  |e verfasserin  |4 aut 
700 1 |a Sumi, Toshihide  |e verfasserin  |4 aut 
700 1 |a Horio, Masafumi  |e verfasserin  |4 aut 
700 1 |a Yamamoto, Kohei  |e verfasserin  |4 aut 
700 1 |a Kubota, Yuya  |e verfasserin  |4 aut 
700 1 |a Owada, Shigeki  |e verfasserin  |4 aut 
700 1 |a Yabashi, Makina  |e verfasserin  |4 aut 
700 1 |a Matsuda, Iwao  |e verfasserin  |4 aut 
700 1 |a Tanaka, Masaaki  |e verfasserin  |4 aut 
773 0 8 |i Enthalten in  |t Advanced materials (Deerfield Beach, Fla.)  |d 1998  |g 35(2023), 40 vom: 01. Okt., Seite e2301347  |w (DE-627)NLM098206397  |x 1521-4095  |7 nnns 
773 1 8 |g volume:35  |g year:2023  |g number:40  |g day:01  |g month:10  |g pages:e2301347 
856 4 0 |u http://dx.doi.org/10.1002/adma.202301347  |3 Volltext 
912 |a GBV_USEFLAG_A 
912 |a SYSFLAG_A 
912 |a GBV_NLM 
912 |a GBV_ILN_350 
951 |a AR 
952 |d 35  |j 2023  |e 40  |b 01  |c 10  |h e2301347