Use of electron backscatter diffraction patterns to determine the crystal lattice. Part 2. Offset corrections

© Gert Nolze et al. 2023.

Bibliographische Detailangaben
Veröffentlicht in:Journal of applied crystallography. - 1998. - 56(2023), Pt 2 vom: 01. Apr., Seite 361-366
1. Verfasser: Nolze, Gert (VerfasserIn)
Weitere Verfasser: Tokarski, Tomasz, Rychłowski, Łukasz
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2023
Zugriff auf das übergeordnete Werk:Journal of applied crystallography
Schlagworte:Journal Article Funk transform Kikuchi patterns automated Bragg angle determination dynamical theory of electron diffraction electron backscatter diffraction lattice parameter determination lattice parameters mean atomic number
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520 |a A band width determination using the first derivative of the band profile systematically underestimates the true Bragg angle. Corrections are proposed to compensate for the resulting offset Δa/a of the mean lattice parameters derived from as many Kikuchi band widths as possible. For dynamically simulated Kikuchi patterns, Δa/a can reach up to 8% for phases with a high mean atomic number Z, whereas for much more common low-Z materials the offset decreases linearly. A predicted offset Δa/a = f(Z) is therefore proposed, which also includes the unit-cell volume and thus takes into account the packing density of the scatterers in the material. Since Z is not always available for unknown phases, its substitution by Z max, i.e. the atomic number of the heaviest element in the compound, is still acceptable for an approximate correction. For simulated Kikuchi patterns the offset-corrected lattice parameter deviation is Δa/a < 1.5%. The lattice parameter ratios, and the angles α, β and γ between the basis vectors, are not affected at all 
650 4 |a Journal Article 
650 4 |a Funk transform 
650 4 |a Kikuchi patterns 
650 4 |a automated Bragg angle determination 
650 4 |a dynamical theory of electron diffraction 
650 4 |a electron backscatter diffraction 
650 4 |a lattice parameter determination 
650 4 |a lattice parameters 
650 4 |a mean atomic number 
700 1 |a Tokarski, Tomasz  |e verfasserin  |4 aut 
700 1 |a Rychłowski, Łukasz  |e verfasserin  |4 aut 
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