Ti3 C2 Tx MXene van der Waals Gate Contact for GaN High Electron Mobility Transistors

Bibliographische Detailangaben
Veröffentlicht in:	Advanced materials (Deerfield Beach, Fla.). - 1998. - 35(2023), 22 vom: 20. Juni, Seite e2211738
1. Verfasser:	Wang, Chuanju (VerfasserIn)
Weitere Verfasser:	Xu, Xiangming, Tyagi, Shubham, Rout, Paresh C, Schwingenschlögl, Udo, Sarkar, Biplab, Khandelwal, Vishal, Liu, Xinke, Gao, Linfei, Hedhili, Mohamed Nejib, Alshareef, Husam N, Li, Xiaohang
Format:	Online-Aufsatz
Sprache:	English
Veröffentlicht:	2023
Zugriff auf das übergeordnete Werk:	Advanced materials (Deerfield Beach, Fla.)
Schlagworte:	Journal Article GaN HEMTs Ti3C2Tx MXene near-ideal subthreshold swing record high ION/IOFF ratio vdWs heterojunction

Beschreibung
Zusammenfassung:	© 2023 Wiley-VCH GmbH. Gate controllability is a key factor that determines the performance of GaN high electron mobility transistors (HEMTs). However, at the traditional metal-GaN interface, direct chemical interaction between metal and GaN can result in fixed charges and traps, which can significantly deteriorate the gate controllability. In this study, Ti3 C2 Tx MXene films are integrated into GaN HEMTs as the gate contact, wherein van der Waals heterojunctions are formed between MXene films and GaN without direct chemical bonding. The GaN HEMTs with enhanced gate controllability exhibit an extremely low off-state current (IOFF ) of 10-7 mA mm-1 , a record high ION /IOFF current ratio of ≈1013 (which is six orders of magnitude higher than conventional Ni/Au contact), a high off-state drain breakdown voltage of 1085 V, and a near-ideal subthreshold swing of 61 mV dec-1 . This work shows the great potential of MXene films as gate electrodes in wide-bandgap semiconductor devices
Beschreibung:	Date Completed 01.06.2023 Date Revised 01.06.2023 published: Print-Electronic Citation Status PubMed-not-MEDLINE
ISSN:	1521-4095
DOI:	10.1002/adma.202211738