Record-High Electron Mobility Exceeding 16 cm2 V- 1 s- 1 in Bisisoindigo-Based Polymer Semiconductor with a Fully Locked Conjugated Backbone

Record-High Electron Mobility Exceeding 16 cm2 V- 1 s- 1 in Bisisoindigo-Based Polymer Semiconductor with a Fully Locked Conjugated Backbone

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Détails bibliographiques
Publié dans:Advanced materials (Deerfield Beach, Fla.). - 1998. - 35(2023), 17 vom: 27. Apr., Seite e2300145
Auteur principal: Zhang, Weifeng (Auteur)
Autres auteurs: Shi, Keli, Lai, Jing, Zhou, Yankai, Wei, Xuyang, Che, Qian, Wei, Jinbei, Wang, Liping, Yu, Gui
Format: Article en ligne
Langue:English
Publié: 2023
Accès à la collection:Advanced materials (Deerfield Beach, Fla.)
Sujets:Journal Article D−A copolymers electron mobilities flexible field-effect transistors fully locked conjugated backbones nonbonding interactions
Accès en ligne Volltext