Style de citation APA

Zhang, W., Shi, K., Lai, J., Zhou, Y., Wei, X., Che, Q., . . . Yu, G. (2023). Record-High Electron Mobility Exceeding 16 cm2 V- 1 s- 1 in Bisisoindigo-Based Polymer Semiconductor with a Fully Locked Conjugated Backbone. Advanced materials (Deerfield Beach, Fla.), 35(17), . https://doi.org/10.1002/adma.202300145

Style de citation Chicago

Zhang, Weifeng, Keli Shi, Jing Lai, Yankai Zhou, Xuyang Wei, Qian Che, Jinbei Wei, Liping Wang, et Gui Yu. "Record-High Electron Mobility Exceeding 16 Cm2 V- 1 S- 1 in Bisisoindigo-Based Polymer Semiconductor with a Fully Locked Conjugated Backbone." Advanced Materials (Deerfield Beach, Fla.) 35, no. 17 (2023). https://dx.doi.org/10.1002/adma.202300145.

Style de citation MLA

Zhang, Weifeng, et al. "Record-High Electron Mobility Exceeding 16 Cm2 V- 1 S- 1 in Bisisoindigo-Based Polymer Semiconductor with a Fully Locked Conjugated Backbone." Advanced Materials (Deerfield Beach, Fla.), vol. 35, no. 17, 2023.