Is Cu3-x P a Semiconductor, a Metal, or a Semimetal?

© 2023 The Authors. Published by American Chemical Society.

Bibliographische Detailangaben
Veröffentlicht in:Chemistry of materials : a publication of the American Chemical Society. - 1998. - 35(2023), 3 vom: 14. Feb., Seite 1259-1272
1. Verfasser: Crovetto, Andrea (VerfasserIn)
Weitere Verfasser: Unold, Thomas, Zakutayev, Andriy
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2023
Zugriff auf das übergeordnete Werk:Chemistry of materials : a publication of the American Chemical Society
Schlagworte:Journal Article
Beschreibung
Zusammenfassung:© 2023 The Authors. Published by American Chemical Society.
Despite the recent surge in interest in Cu3-x P for catalysis, batteries, and plasmonics, the electronic nature of Cu3-x P remains unclear. Some studies have shown evidence of semiconducting behavior, whereas others have argued that Cu3-x P is a metallic compound. Here, we attempt to resolve this dilemma on the basis of combinatorial thin-film experiments, electronic structure calculations, and semiclassical Boltzmann transport theory. We find strong evidence that stoichiometric, defect-free Cu3P is an intrinsic semimetal, i.e., a material with a small overlap between the valence and the conduction band. On the other hand, experimentally realizable Cu3-x P films are always p-type semimetals natively doped by copper vacancies regardless of x. It is not implausible that Cu3-x P samples with very small characteristic sizes (such as small nanoparticles) are semiconductors due to quantum confinement effects that result in the opening of a band gap. We observe high hole mobilities (276 cm2/(V s)) in Cu3-x P films at low temperatures, pointing to low ionized impurity scattering rates in spite of a high doping density. We report an optical effect equivalent to the Burstein-Moss shift, and we assign an infrared absorption peak to bulk interband transitions rather than to a surface plasmon resonance. From a materials processing perspective, this study demonstrates the suitability of reactive sputter deposition for detailed high-throughput studies of emerging metal phosphides
Beschreibung:Date Revised 24.02.2023
published: Electronic-eCollection
Citation Status PubMed-not-MEDLINE
ISSN:0897-4756
DOI:10.1021/acs.chemmater.2c03283