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231226s2009 xx |||||o 00| ||eng c |
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|a 10.1002/adma.200803582
|2 doi
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|a eng
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|a Burghard, Marko
|e verfasserin
|4 aut
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| 245 |
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|a Carbon-Based Field-Effect Transistors for Nanoelectronics
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|c 2009
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| 336 |
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|a Text
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|a ƒaComputermedien
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|a ƒa Online-Ressource
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|a Date Revised 08.02.2023
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a Copyright © 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a In this review, the suitability of the major types of carbon nanostructures as conducting channels of field-effect transistors (FETs) is compared on the basis of the dimensionality and size of their π-conjugated system. For each of these materials, recent progress in its synthesis, electrical and structural characterization, as well as its implementation into various gate configurations is surveyed, with emphasis laid onto nanoscale aspects of the FET design and the attainable device performance. Finally, promising future research directions, such as the integration of different carbon nanostructures into novel device architectures, are outlined
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|a Journal Article
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|a Review
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|a carbon nanotubes
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|a field-effect transistors
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|a graphene
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|a organic semiconductors
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1 |
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|a Klauk, Hagen
|e verfasserin
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| 700 |
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|a Kern, Klaus
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|t Advanced materials (Deerfield Beach, Fla.)
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|g 21(2009), 25-26 vom: 13. Juli, Seite 2586-2600
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