Carbon-Based Field-Effect Transistors for Nanoelectronics
Copyright © 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
| Veröffentlicht in: | Advanced materials (Deerfield Beach, Fla.). - 1998. - 21(2009), 25-26 vom: 13. Juli, Seite 2586-2600 |
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| Format: | Online-Aufsatz |
| Sprache: | English |
| Veröffentlicht: |
2009
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| Zugriff auf das übergeordnete Werk: | Advanced materials (Deerfield Beach, Fla.) |
| Schlagworte: | Journal Article Review carbon nanotubes field-effect transistors graphene organic semiconductors |
| Zusammenfassung: | Copyright © 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. In this review, the suitability of the major types of carbon nanostructures as conducting channels of field-effect transistors (FETs) is compared on the basis of the dimensionality and size of their π-conjugated system. For each of these materials, recent progress in its synthesis, electrical and structural characterization, as well as its implementation into various gate configurations is surveyed, with emphasis laid onto nanoscale aspects of the FET design and the attainable device performance. Finally, promising future research directions, such as the integration of different carbon nanostructures into novel device architectures, are outlined |
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| Beschreibung: | Date Revised 08.02.2023 published: Print-Electronic Citation Status PubMed-not-MEDLINE |
| ISSN: | 1521-4095 |
| DOI: | 10.1002/adma.200803582 |