Spatially Resolved Potential Distribution in Carbon Nanotube Cross-Junction Devices

Bibliographische Detailangaben
Veröffentlicht in:	Advanced materials (Deerfield Beach, Fla.). - 1998. - 21(2009), 25-26 vom: 13. Juli, Seite 2720-2724
1. Verfasser:	Lee, Eduardo J H (VerfasserIn)
Weitere Verfasser:	Balasubramanian, Kannan, Burghard, Marko, Kern, Klaus
Format:	Online-Aufsatz
Sprache:	English
Veröffentlicht:	2009
Zugriff auf das übergeordnete Werk:	Advanced materials (Deerfield Beach, Fla.)
Schlagworte:	Journal Article carbon nanotubes field-effect transistors photoconductivity


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520			\|a Crossed-nanotube junctions, the basic constituents of carbon nanotube networks, are investigated by scanning photocurrent microscopy. The location of the predominant electrostatic potential drop, at the electrical contacts or at the junction, is found to be highly dependent on the transport regime. Also, whereas Schottky barriers are formed at M-S (metal-semiconductor) nanotube crossings, isotype heterojunctions are formed at S-S ones (figure)
650		4	\|a Journal Article
650		4	\|a carbon nanotubes
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650		4	\|a photoconductivity
700	1		\|a Balasubramanian, Kannan \|e verfasserin \|4 aut
700	1		\|a Burghard, Marko \|e verfasserin \|4 aut
700	1		\|a Kern, Klaus \|e verfasserin \|4 aut
773	0	8	\|i Enthalten in \|t Advanced materials (Deerfield Beach, Fla.) \|d 1998 \|g 21(2009), 25-26 vom: 13. Juli, Seite 2720-2724 \|w (DE-627)NLM098206397 \|x 1521-4095 \|7 nnns
773	1	8	\|g volume:21 \|g year:2009 \|g number:25-26 \|g day:13 \|g month:07 \|g pages:2720-2724
856	4	0	\|u http://dx.doi.org/10.1002/adma.200803545 \|3 Volltext
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