Spatially Resolved Potential Distribution in Carbon Nanotube Cross-Junction Devices

Spatially Resolved Potential Distribution in Carbon Nanotube Cross-Junction Devices

Copyright © 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 21(2009), 25-26 vom: 13. Juli, Seite 2720-2724
1. Verfasser: Lee, Eduardo J H (VerfasserIn)
Weitere Verfasser: Balasubramanian, Kannan, Burghard, Marko, Kern, Klaus
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2009
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article carbon nanotubes field-effect transistors photoconductivity
Beschreibung
Zusammenfassung:Copyright © 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Crossed-nanotube junctions, the basic constituents of carbon nanotube networks, are investigated by scanning photocurrent microscopy. The location of the predominant electrostatic potential drop, at the electrical contacts or at the junction, is found to be highly dependent on the transport regime. Also, whereas Schottky barriers are formed at M-S (metal-semiconductor) nanotube crossings, isotype heterojunctions are formed at S-S ones (figure)
Beschreibung:Date Revised 08.02.2023
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.200803545