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231226s2023 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202211157
|2 doi
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|a pubmed24n1171.xml
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|a (DE-627)NLM351590838
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|a (NLM)36648210
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|a DE-627
|b ger
|c DE-627
|e rakwb
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| 041 |
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|a eng
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| 100 |
1 |
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|a Ippolito, Stefano
|e verfasserin
|4 aut
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| 245 |
1 |
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|a Unveiling Charge-Transport Mechanisms in Electronic Devices Based on Defect-Engineered MoS2 Covalent Networks
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|c 2023
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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| 500 |
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|a Date Completed 13.04.2023
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|a Date Revised 13.04.2023
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2023 The Authors. Advanced Materials published by Wiley-VCH GmbH.
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|a Device performance of solution-processed 2D semiconductors in printed electronics has been limited so far by structural defects and high interflake junction resistance. Covalently interconnected networks of transition metal dichalcogenides potentially represent an efficient strategy to overcome both limitations simultaneously. Yet, the charge-transport properties in such systems have not been systematically researched. Here, the charge-transport mechanisms of printed devices based on covalent MoS2 networks are unveiled via multiscale analysis, comparing the effects of aromatic versus aliphatic dithiolated linkers. Temperature-dependent electrical measurements reveal hopping as the dominant transport mechanism: aliphatic systems lead to 3D variable range hopping, unlike the nearest neighbor hopping observed for aromatic linkers. The novel analysis based on percolation theory attributes the superior performance of devices functionalized with π-conjugated molecules to the improved interflake electronic connectivity and formation of additional percolation paths, as further corroborated by density functional calculations. Valuable guidelines for harnessing the charge-transport properties in MoS2 devices based on covalent networks are provided
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|a Journal Article
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|a charge-transport properties
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4 |
|a covalent networks
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| 650 |
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|a defect engineering
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|a electrical devices
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| 650 |
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4 |
|a hopping mechanisms
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| 650 |
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4 |
|a transition metal dichalcogenides
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1 |
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|a Urban, Francesca
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zheng, Wenhao
|e verfasserin
|4 aut
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1 |
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|a Mazzarisi, Onofrio
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Valentini, Cataldo
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Kelly, Adam G
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Gali, Sai Manoj
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Bonn, Mischa
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Beljonne, David
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Corberi, Federico
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Coleman, Jonathan N
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Hai I
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Samorì, Paolo
|e verfasserin
|4 aut
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| 773 |
0 |
8 |
|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 35(2023), 15 vom: 25. Apr., Seite e2211157
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
1 |
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|g volume:35
|g year:2023
|g number:15
|g day:25
|g month:04
|g pages:e2211157
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|u http://dx.doi.org/10.1002/adma.202211157
|3 Volltext
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|a AR
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|d 35
|j 2023
|e 15
|b 25
|c 04
|h e2211157
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