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231226s2023 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202210380
|2 doi
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|a pubmed24n1167.xml
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|a (DE-627)NLM350391769
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|a (NLM)36527338
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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|a Zheng, Sikang
|e verfasserin
|4 aut
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|a Symmetry-Guaranteed High Carrier Mobility in Quasi-2D Thermoelectric Semiconductors
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|c 2023
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Completed 13.03.2023
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|a Date Revised 13.03.2023
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2023 Wiley-VCH GmbH.
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|a Quasi-2D semiconductors have garnered immense research interest for next-generation electronics and thermoelectrics due to their unique structural, mechanical, and transport properties. However, most quasi-2D semiconductors experimentally synthesized so far have relatively low carrier mobility, preventing the achievement of exceptional power output. To break through this obstacle, a route is proposed based on the crystal symmetry arguments to facilitate the charge transport of quasi-2D semiconductors, in which the horizontal mirror symmetry is found to vanish the electron-phonon coupling strength mediated by phonons with purely out-of-plane vibrational vectors. This is demonstrated in ZrBeSi-type quasi-2D systems, where the representative sample Ba1.01 AgSb shows a high room-temperature hole mobility of 344 cm2 V-1 S-1 , a record value among quasi-2D polycrystalline thermoelectrics. Accompanied by intrinsically low thermal conductivity, an excellent p-type zT of ≈1.3 is reached at 1012 K, which is the highest value in ZrBeSi-type compounds. This work uncovers the relation between electron-phonon coupling and crystal symmetry in quasi-2D systems, which broadens the horizon to develop high mobility semiconductors for electronic and energy conversion applications
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|a Journal Article
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|a high carrier mobility
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|a horizontal mirror symmetry
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|a quasi-2D semiconductors
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|a thermoelectrics
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|a Xiao, Shijuan
|e verfasserin
|4 aut
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|a Peng, Kunling
|e verfasserin
|4 aut
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|a Pan, Yu
|e verfasserin
|4 aut
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|a Yang, Xiaolong
|e verfasserin
|4 aut
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|a Lu, Xu
|e verfasserin
|4 aut
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|a Han, Guang
|e verfasserin
|4 aut
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|a Zhang, Bin
|e verfasserin
|4 aut
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|a Zhou, Zizhen
|e verfasserin
|4 aut
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|a Wang, Guoyu
|e verfasserin
|4 aut
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| 700 |
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|a Zhou, Xiaoyuan
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 35(2023), 10 vom: 01. März, Seite e2210380
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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|g volume:35
|g year:2023
|g number:10
|g day:01
|g month:03
|g pages:e2210380
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|u http://dx.doi.org/10.1002/adma.202210380
|3 Volltext
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