Symmetry-Guaranteed High Carrier Mobility in Quasi-2D Thermoelectric Semiconductors

Symmetry-Guaranteed High Carrier Mobility in Quasi-2D Thermoelectric Semiconductors

© 2023 Wiley-VCH GmbH.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 35(2023), 10 vom: 01. März, Seite e2210380
1. Verfasser: Zheng, Sikang (VerfasserIn)
Weitere Verfasser: Xiao, Shijuan, Peng, Kunling, Pan, Yu, Yang, Xiaolong, Lu, Xu, Han, Guang, Zhang, Bin, Zhou, Zizhen, Wang, Guoyu, Zhou, Xiaoyuan
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2023
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article high carrier mobility horizontal mirror symmetry quasi-2D semiconductors thermoelectrics
Beschreibung
Zusammenfassung:© 2023 Wiley-VCH GmbH.
Quasi-2D semiconductors have garnered immense research interest for next-generation electronics and thermoelectrics due to their unique structural, mechanical, and transport properties. However, most quasi-2D semiconductors experimentally synthesized so far have relatively low carrier mobility, preventing the achievement of exceptional power output. To break through this obstacle, a route is proposed based on the crystal symmetry arguments to facilitate the charge transport of quasi-2D semiconductors, in which the horizontal mirror symmetry is found to vanish the electron-phonon coupling strength mediated by phonons with purely out-of-plane vibrational vectors. This is demonstrated in ZrBeSi-type quasi-2D systems, where the representative sample Ba1.01 AgSb shows a high room-temperature hole mobility of 344 cm2 V-1 S-1 , a record value among quasi-2D polycrystalline thermoelectrics. Accompanied by intrinsically low thermal conductivity, an excellent p-type zT of ≈1.3 is reached at 1012 K, which is the highest value in ZrBeSi-type compounds. This work uncovers the relation between electron-phonon coupling and crystal symmetry in quasi-2D systems, which broadens the horizon to develop high mobility semiconductors for electronic and energy conversion applications
Beschreibung:Date Completed 13.03.2023
Date Revised 13.03.2023
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.202210380