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|a 10.1002/adma.202208757
|2 doi
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|a pubmed24n1166.xml
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|a (DE-627)NLM349966761
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|a (NLM)36484362
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|a DE-627
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|a eng
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|a Lim, Dong Un
|e verfasserin
|4 aut
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|a Monolithic Tandem Vertical Electrochemical Transistors for Printed Multi-Valued Logic
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|c 2023
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|a Text
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|a ƒaComputermedien
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|a ƒa Online-Ressource
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|a Date Completed 02.03.2023
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|a Date Revised 02.03.2023
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2022 Wiley-VCH GmbH.
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|a Organic electrochemical transistors (OECTs) have recently emerged as a feasible candidate to realize the next generation of printable electronics. Especially, their chemical versatility and the unique redox-based operating principle have provided new possibilities in high-functioning logic circuitry beyond the traditional binary Boolean logic. Here, a simple strategy to electrochemically realize monolithic multi-valued logic transistors is presented, which is one of the most promising branches of transistor technology in the forthcoming era of hyper Moore's law. A vertically stacked heterogeneous dual-channel architecture is introduced with a patterned reference electrode, which enables a facile manifestation of stable and equiprobable ternary logic states with a reduced transistor footprint. The dual-ion-penetration mechanism coupled with ultrashort vertical channel even allows a very-high accessing frequency to multiple logic states reaching over 10 MHz. Furthermore, printed arrays of ternary logic gates with full voltage swing within 1 V are demonstrated
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|a Journal Article
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|a electrochemical transistors
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|a ion penetration
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|a multivalued transistors
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|a ternary logic
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|a vertical transistors
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|a Jo, Sae Byeok
|e verfasserin
|4 aut
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|a Cho, Jeong Ho
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 35(2023), 9 vom: 01. März, Seite e2208757
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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|g volume:35
|g year:2023
|g number:9
|g day:01
|g month:03
|g pages:e2208757
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|u http://dx.doi.org/10.1002/adma.202208757
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