Monolithic Tandem Vertical Electrochemical Transistors for Printed Multi-Valued Logic

© 2022 Wiley-VCH GmbH.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 35(2023), 9 vom: 01. März, Seite e2208757
1. Verfasser: Lim, Dong Un (VerfasserIn)
Weitere Verfasser: Jo, Sae Byeok, Cho, Jeong Ho
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2023
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article electrochemical transistors ion penetration multivalued transistors ternary logic vertical transistors
Beschreibung
Zusammenfassung:© 2022 Wiley-VCH GmbH.
Organic electrochemical transistors (OECTs) have recently emerged as a feasible candidate to realize the next generation of printable electronics. Especially, their chemical versatility and the unique redox-based operating principle have provided new possibilities in high-functioning logic circuitry beyond the traditional binary Boolean logic. Here, a simple strategy to electrochemically realize monolithic multi-valued logic transistors is presented, which is one of the most promising branches of transistor technology in the forthcoming era of hyper Moore's law. A vertically stacked heterogeneous dual-channel architecture is introduced with a patterned reference electrode, which enables a facile manifestation of stable and equiprobable ternary logic states with a reduced transistor footprint. The dual-ion-penetration mechanism coupled with ultrashort vertical channel even allows a very-high accessing frequency to multiple logic states reaching over 10 MHz. Furthermore, printed arrays of ternary logic gates with full voltage swing within 1 V are demonstrated
Beschreibung:Date Completed 02.03.2023
Date Revised 02.03.2023
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.202208757