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231226s2022 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202206389
|2 doi
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|a pubmed24n1157.xml
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|a (DE-627)NLM347233597
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|a (NLM)36208081
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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|a Ci, Haina
|e verfasserin
|4 aut
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|a Transfer-Free Quasi-Suspended Graphene Grown on a Si Wafer
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|c 2022
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Completed 23.12.2022
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|a Date Revised 23.12.2022
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2022 Wiley-VCH GmbH.
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|a The direct growth of graphene affording wafer-scale uniformity on insulators is paramount to electronic and optoelectronic applications; however, it remains a challenge to date, because it entails an entirely different growth mode than that over metals. Herein, the metal-catalyst-free growth of quasi-suspended graphene on a Si wafer is demonstrated using an interface-decoupling chemical vapor deposition strategy. The employment of lower-than-conventional H2 dosage and concurrent introduction of methanol during growth can effectively weaken the interaction between the synthesized graphene and the underlying substrate. The growth mode can be thus fine-tuned, producing a predominantly monolayer graphene film with wafer-level homogeneity. Graphene thus grown on a 4 inch Si wafer enables the transfer-free fabrication of high-performance graphene-based field-effect transistor arrays that exhibit almost no shift in the charge neutral point, indicating a quasi-suspended feature of the graphene. Moreover, a carrier mobility up to 15 000 cm2 V-1 s-1 can be attained. This study is anticipated to offer meaningful insights into the synthesis of wafer-scale high-quality graphene on dielectrics for practical graphene devices
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|a Journal Article
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|a 2D materials
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|a Si wafers
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|a chemical vapor deposition
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|a graphene
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|a quasi-suspended graphene
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|a transfer-free
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|a Chen, Jingtao
|e verfasserin
|4 aut
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|a Ma, Hao
|e verfasserin
|4 aut
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|a Sun, Xiaoli
|e verfasserin
|4 aut
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|a Jiang, Xingyu
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|a Liu, Kaicong
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|a Shan, Jingyuan
|e verfasserin
|4 aut
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|a Lian, Xueyu
|e verfasserin
|4 aut
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|a Jiang, Bei
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|a Liu, Ruojuan
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|a Liu, Bingzhi
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|a Yang, Guiqi
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|a Yin, Wanjian
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|4 aut
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|a Zhao, Wen
|e verfasserin
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|a Huang, Lizhen
|e verfasserin
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|a Gao, Teng
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|a Sun, Jingyu
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|a Liu, Zhongfan
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 34(2022), 51 vom: 09. Dez., Seite e2206389
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:34
|g year:2022
|g number:51
|g day:09
|g month:12
|g pages:e2206389
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|u http://dx.doi.org/10.1002/adma.202206389
|3 Volltext
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