Transfer-Free Quasi-Suspended Graphene Grown on a Si Wafer

Bibliographische Detailangaben
Veröffentlicht in:	Advanced materials (Deerfield Beach, Fla.). - 1998. - 34(2022), 51 vom: 09. Dez., Seite e2206389
1. Verfasser:	Ci, Haina (VerfasserIn)
Weitere Verfasser:	Chen, Jingtao, Ma, Hao, Sun, Xiaoli, Jiang, Xingyu, Liu, Kaicong, Shan, Jingyuan, Lian, Xueyu, Jiang, Bei, Liu, Ruojuan, Liu, Bingzhi, Yang, Guiqi, Yin, Wanjian, Zhao, Wen, Huang, Lizhen, Gao, Teng, Sun, Jingyu, Liu, Zhongfan
Format:	Online-Aufsatz
Sprache:	English
Veröffentlicht:	2022
Zugriff auf das übergeordnete Werk:	Advanced materials (Deerfield Beach, Fla.)
Schlagworte:	Journal Article 2D materials Si wafers chemical vapor deposition graphene quasi-suspended graphene transfer-free

Beschreibung
Zusammenfassung:	© 2022 Wiley-VCH GmbH. The direct growth of graphene affording wafer-scale uniformity on insulators is paramount to electronic and optoelectronic applications; however, it remains a challenge to date, because it entails an entirely different growth mode than that over metals. Herein, the metal-catalyst-free growth of quasi-suspended graphene on a Si wafer is demonstrated using an interface-decoupling chemical vapor deposition strategy. The employment of lower-than-conventional H2 dosage and concurrent introduction of methanol during growth can effectively weaken the interaction between the synthesized graphene and the underlying substrate. The growth mode can be thus fine-tuned, producing a predominantly monolayer graphene film with wafer-level homogeneity. Graphene thus grown on a 4 inch Si wafer enables the transfer-free fabrication of high-performance graphene-based field-effect transistor arrays that exhibit almost no shift in the charge neutral point, indicating a quasi-suspended feature of the graphene. Moreover, a carrier mobility up to 15 000 cm2 V-1 s-1 can be attained. This study is anticipated to offer meaningful insights into the synthesis of wafer-scale high-quality graphene on dielectrics for practical graphene devices
Beschreibung:	Date Completed 23.12.2022 Date Revised 23.12.2022 published: Print-Electronic Citation Status PubMed-not-MEDLINE
ISSN:	1521-4095
DOI:	10.1002/adma.202206389