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231226s2022 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202207392
|2 doi
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|a pubmed24n1154.xml
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|a (DE-627)NLM346451159
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|a (NLM)36128664
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|e rakwb
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|a eng
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| 100 |
1 |
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|a Li, Lihong
|e verfasserin
|4 aut
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|a Interface Capture Effect Printing Atomic-Thick 2D Semiconductor Thin Films
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|c 2022
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|a Text
|b txt
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Completed 09.12.2022
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|a Date Revised 09.12.2022
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2022 Wiley-VCH GmbH.
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|a 2D semiconductor crystals offer the opportunity to further extend Moore's law to the atomic scale. For practical and low-cost electronic applications, directly printing devices on substrates is advantageous compared to conventional microfabrication techniques that utilize expensive photolithography, etching, and vacuum-metallization processes. However, the currently printed 2D transistors are plagued by unsatisfactory electrical performance, thick semiconductor layers, and low device density. Herein, a facile and scalable 2D semiconductor printing strategy is demonstrated utilizing the interface capture effect and hyperdispersed 2D nanosheet ink to fabricate high-quality and atomic-thick semiconductor thin-film arrays without additional surfactants. Printed robust thin-film transistors using 2D semiconductors (e.g., MoS2 ) and 2D conductive electrodes (e.g., graphene) exhibit high electrical performance, including a carrier mobility of up to 6.7 cm2 V-1 s-1 and an on/off ratio of 2 × 106 at 25 °C. As a proof of concept, 2D transistors are printed with a density of ≈47 000 devices per square centimeter. In addition, this method can be applied to many other 2D materials, such as NbSe2 , Bi2 Se3 , and black phosphorus, for printing diverse high-quality thin films. Thus, the strategy of printable 2D thin-film transistors provides a scalable pathway for the facile manufacturing of high-performance electronics at an affordable cost
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|a Journal Article
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|a 2D materials
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|a direct-writing
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|a printing
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|a transistors
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|a Yu, Xiaoxia
|e verfasserin
|4 aut
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|a Lin, Zhaoyang
|e verfasserin
|4 aut
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|a Cai, Zhenren
|e verfasserin
|4 aut
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|a Cao, Yawei
|e verfasserin
|4 aut
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|a Kong, Wei
|e verfasserin
|4 aut
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|a Xiang, Zhongyuan
|e verfasserin
|4 aut
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|a Gu, Zhengkun
|e verfasserin
|4 aut
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| 700 |
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|a Xing, Xianran
|e verfasserin
|4 aut
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|a Duan, Xiangfeng
|e verfasserin
|4 aut
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| 700 |
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|a Song, Yanlin
|e verfasserin
|4 aut
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| 773 |
0 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 34(2022), 49 vom: 29. Dez., Seite e2207392
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|x 1521-4095
|7 nnns
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|g volume:34
|g year:2022
|g number:49
|g day:29
|g month:12
|g pages:e2207392
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|u http://dx.doi.org/10.1002/adma.202207392
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