Interface Capture Effect Printing Atomic-Thick 2D Semiconductor Thin Films
© 2022 Wiley-VCH GmbH.
Veröffentlicht in: | Advanced materials (Deerfield Beach, Fla.). - 1998. - 34(2022), 49 vom: 29. Dez., Seite e2207392 |
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1. Verfasser: | |
Weitere Verfasser: | , , , , , , , , , |
Format: | Online-Aufsatz |
Sprache: | English |
Veröffentlicht: |
2022
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Zugriff auf das übergeordnete Werk: | Advanced materials (Deerfield Beach, Fla.) |
Schlagworte: | Journal Article 2D materials direct-writing printing transistors |
Zusammenfassung: | © 2022 Wiley-VCH GmbH. 2D semiconductor crystals offer the opportunity to further extend Moore's law to the atomic scale. For practical and low-cost electronic applications, directly printing devices on substrates is advantageous compared to conventional microfabrication techniques that utilize expensive photolithography, etching, and vacuum-metallization processes. However, the currently printed 2D transistors are plagued by unsatisfactory electrical performance, thick semiconductor layers, and low device density. Herein, a facile and scalable 2D semiconductor printing strategy is demonstrated utilizing the interface capture effect and hyperdispersed 2D nanosheet ink to fabricate high-quality and atomic-thick semiconductor thin-film arrays without additional surfactants. Printed robust thin-film transistors using 2D semiconductors (e.g., MoS2 ) and 2D conductive electrodes (e.g., graphene) exhibit high electrical performance, including a carrier mobility of up to 6.7 cm2 V-1 s-1 and an on/off ratio of 2 × 106 at 25 °C. As a proof of concept, 2D transistors are printed with a density of ≈47 000 devices per square centimeter. In addition, this method can be applied to many other 2D materials, such as NbSe2 , Bi2 Se3 , and black phosphorus, for printing diverse high-quality thin films. Thus, the strategy of printable 2D thin-film transistors provides a scalable pathway for the facile manufacturing of high-performance electronics at an affordable cost |
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Beschreibung: | Date Completed 09.12.2022 Date Revised 09.12.2022 published: Print-Electronic Citation Status PubMed-not-MEDLINE |
ISSN: | 1521-4095 |
DOI: | 10.1002/adma.202207392 |