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231226s2022 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202206196
|2 doi
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|a pubmed24n1154.xml
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|a (DE-627)NLM346383439
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|a (NLM)36121643
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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|a Zhang, Zhiyi
|e verfasserin
|4 aut
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|a Approaching the Intrinsic Threshold Breakdown Voltage and Ultrahigh Gain in a Graphite/InSe Schottky Photodetector
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|c 2022
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Revised 24.11.2022
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2022 Wiley-VCH GmbH.
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|a Realizing both ultralow breakdown voltage and ultrahigh gain is one of the major challenges in the development of high-performance avalanche photodetector. Here, it is reported that an ultrahigh avalanche gain of 3 × 105 can be realized in the graphite/InSe Schottky photodetector at a breakdown voltage down to 5.5 V. Remarkably, the threshold breakdown voltage can be further reduced down to 1.8 V by raising the operating temperature, approaching the theoretical limit of 1.5 E g \[{{\cal E}_{\bf g}}\] /e, with E g ${{\cal E}_{\bf g}}$ the bandgap of semiconductor. A 2D impact ionization model is developed and it is uncovered that observation of high gain at low breakdown voltage arises from reduced dimensionality of electron-phonon scattering in the layered InSe flake. These findings open up a promising avenue for developing novel weak-light detectors with low energy consumption and high sensitivity
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|a Journal Article
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4 |
|a InSe
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|a avalanche photodiodes
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4 |
|a layered materials
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| 650 |
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|a van der Waals (vdW) Schottky junctions
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| 700 |
1 |
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|a Cheng, Bin
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Lim, Jeremy
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Gao, Anyuan
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Lyu, Lingyuan
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Cao, Tianjun
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Shuang
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Li, Zhu-An
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wu, Qingyun
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Ang, Lay Kee
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Ang, Yee Sin
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Liang, Shi-Jun
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Miao, Feng
|e verfasserin
|4 aut
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| 773 |
0 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 34(2022), 47 vom: 19. Nov., Seite e2206196
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
1 |
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|g volume:34
|g year:2022
|g number:47
|g day:19
|g month:11
|g pages:e2206196
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|u http://dx.doi.org/10.1002/adma.202206196
|3 Volltext
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|d 34
|j 2022
|e 47
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|h e2206196
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