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|a 10.1002/adma.202205871
|2 doi
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|a pubmed24n1151.xml
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|a (DE-627)NLM345571940
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|a (NLM)36039798
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
1 |
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|a Kim, Jaehyun
|e verfasserin
|4 aut
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|a Readily Accessible Metallic Micro-Island Arrays for High-Performance Metal Oxide Thin-Film Transistors
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|c 2022
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Revised 10.11.2022
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2022 The Authors. Advanced Materials published by Wiley-VCH GmbH.
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|a Thin-film transistors using metal oxide semiconductors are essential in many unconventional electronic devices. Nevertheless, further advances will be necessary to broaden their technological appeal. Here, a new strategy is reported to achieve high-performance solution-processed metal oxide thin-film transistors (MOTFTs) by introducing a metallic micro-island array (M-MIA) on top of the MO back channel, where the MO is a-IGZO (amorphous indium-gallium-zinc-oxide). Here Al-MIAs are fabricated using honeycomb cinnamate cellulose films, created by a scalable breath-figure method, as a shadow mask. For IGZO TFTs, the electron mobility (µe ) increases from ≈3.6 cm2 V-1 s-1 to near 15.6 cm2 V-1 s-1 for optimal Al-MIA dimension/coverage of 1.25 µm/51%. The Al-MIA IGZO TFT performance is superior to that of controls using compact/planar Al layers (Al-PL TFTs) and Au-MIAs with the same channel coverage. Kelvin probe force microscopy and technology computer-aided design simulations reveal that charge transfer occurs between the Al and the IGZO channel which is optimized for specific Al-MIA dimensions/surface channel coverages. Furthermore, such Al-MIA IGZO TFTs with a high-k fluoride-doped alumina dielectric exhibit a maximum µe of >50.2 cm2 V-1 s-1 . This is the first demonstration of a micro-structured MO semiconductor heterojunction with submicrometer resolution metallic arrays for enhanced transistor performance and broad applicability to other devices
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|a Journal Article
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|a amorphous indium-gallium-zinc-oxide
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|a metal oxide semiconductors
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|a metallic capping layers
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|a technology computer-aided design simulations
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4 |
|a thin-film transistors
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|a Park, Joon Bee
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zheng, Ding
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Kim, Joon-Seok
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Cheng, Yuhua
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Park, Sung Kyu
|e verfasserin
|4 aut
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| 700 |
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|a Huang, Wei
|e verfasserin
|4 aut
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| 700 |
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|a Marks, Tobin J
|e verfasserin
|4 aut
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| 700 |
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|a Facchetti, Antonio
|e verfasserin
|4 aut
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| 773 |
0 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 34(2022), 45 vom: 15. Nov., Seite e2205871
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:34
|g year:2022
|g number:45
|g day:15
|g month:11
|g pages:e2205871
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|u http://dx.doi.org/10.1002/adma.202205871
|3 Volltext
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|a AR
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|d 34
|j 2022
|e 45
|b 15
|c 11
|h e2205871
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