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231226s2022 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202203485
|2 doi
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|a pubmed24n1149.xml
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|a (DE-627)NLM344813746
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|a (NLM)35962631
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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|a Pan, Qingguang
|e verfasserin
|4 aut
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|a Flat-Zigzag Interface Design of Chalcogenide Heterostructure toward Ultralow Volume Expansion for High-Performance Potassium Storage
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|c 2022
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Revised 28.09.2022
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2022 Wiley-VCH GmbH.
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|a Heterostructure construction of layered metal chalcogenides can boost their alkali-metal storage performance, where the charge transfer kinetics can be promoted by the built-in electric fields. However, these heterostructures usually undergo interface separation due to severe layer expansion, especially for large-size potassium accommodation, resulting in the deconstruction of heterostructures and battery performance fading. Herein, first a stable interface design strategy where two metal chalcogenides with totally different layer-morphologies are stacked to form large K+ transport channels, rendering ultralow interlayer expansion, is presented. As a proof of concept, the flat-zigzag MoS2 /Bi2 S3 heterostructures stacked with zigzag-morphology Bi2 S3 and flat-morphology MoS2 present an ultralow expansion ratio (1.98%) versus MoS2 (9.66%) and Bi2 S3 (9.61%), which deliver an ultrahigh potassium storage capacity of above 600 mAh g-1 and capacity retention of 76% after 500 cycles, together with the built-in electric field of heterostructures. Once the heterostructures are used as an anode for potassium-based dual-ion batteries (K-DIBs), it achieves a superior full-cell capacity of ≈166 mAh g-1 with a capacity retention of 71% after 400 cycles, which is an outstanding performance among the reported K-DIBs. This proposed interface stacking strategy may offer a new way toward stable heterostructure design for metal ions storage and transport applications
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|a Journal Article
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|a MoS2/Bi2S3
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|a anodes
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|a dual-ion batteries
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|a flat-zigzag stacking
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|a heterostructure interfaces
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|a potassium-ion batteries
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|a ultralow expansion
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|a Tong, Zhaopeng
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Su, Yuanqiang
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zheng, Yongping
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Shang, Lin
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Tang, Yongbing
|e verfasserin
|4 aut
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| 773 |
0 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 34(2022), 39 vom: 07. Sept., Seite e2203485
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
1 |
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|g volume:34
|g year:2022
|g number:39
|g day:07
|g month:09
|g pages:e2203485
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|u http://dx.doi.org/10.1002/adma.202203485
|3 Volltext
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